FQB2N30TM

FQB2N30TM

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FQB2N30TM
Mfr.:
Описание:
MOSFET N-CH 300V 2.1A D2PAK
Упаковка:
Tape & Reel (TR)
Datasheet:
FQB2N30TM Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:FQB2N30TM
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:onsemi
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):7990209dc00c5b5db65871c8bf669854
Current - Continuous Drain (Id) @ 25°C:b9bf2acbfa8b83998263c6085fe5e2bc
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:fa884a79038288b4218e753d5d90595e
Vgs(th) (Max) @ Id:aa9c33afb123e4299b76ff79e98e6369
Gate Charge (Qg) (Max) @ Vgs:3e13abc783ee5ecaced63ede7e9028b3
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:4cbc32ea76e91dc5b768914a415d1360
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):47921e7072c5e4416e15bdb1ea57b7c7
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:bf4aa032e4c992412ea226c67524cac7
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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