FQD10N20CTM_F080

FQD10N20CTM_F080

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FQD10N20CTM_F080
Mfr.:
Описание:
MOSFET N-CH 200V 7.8A DPAK
Упаковка:
Tape & Reel (TR)
Datasheet:
FQD10N20CTM_F080 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:FQD10N20CTM_F080
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:onsemi
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:6c2cd658571606f98aecc8600708e169
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:f908096edf6fdd6f53f5cf6712220d54
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:3c309df0dab075d5fb4f85fd7f1eb952
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:e0f3fd8e4b1a7767cba71de674e4c3e2
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):834bbc8016135d4c73a1bf9fa6b30b1b
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:7ada2e7f7b50fcad7566a70926a057cb
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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