FQD12P10TM-F085

FQD12P10TM-F085

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FQD12P10TM-F085
Mfr.:
Описание:
MOSFET P-CH 100V 9.4A TO252
Упаковка:
Tape & Reel (TR)
Datasheet:
FQD12P10TM-F085 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:FQD12P10TM-F085
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:onsemi
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:3c0bb4c0b844d9f1f413626d3bd94355
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:ea3253c9aa12bb0fe4928fde12d16354
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:5144cbf851e5015698adf3f82ac7ef27
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:464fbfb65acb73af27e220370a6cb0cc
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):172be7ed5aeb2f00f98ad454a1e1f00d
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:7ada2e7f7b50fcad7566a70926a057cb
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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