HGTP10N120BN

HGTP10N120BN

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HGTP10N120BN
Mfr.:
Описание:
IGBT 1200V 35A 298W TO220AB
Упаковка:
Tube
Datasheet:
HGTP10N120BN Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:HGTP10N120BN
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:onsemi
Упаковка:Tube
Product Status:81a04506d9ec7639ad93ec4fd63454ba
IGBT Type:2e86438e971de59fdacd9db11a83b0fc
Voltage - Collector Emitter Breakdown (Max):edca1d2343e4e5615ce51a879f622a76
Current - Collector (Ic) (Max):33620148295903fa01c1f5f1771e354b
Current - Collector Pulsed (Icm):27fcc57db427c5f2eb0181db009b3f69
Vce(on) (Max) @ Vge, Ic:5e8eb53c7e75ad48d964ef63a8df6b63
Power - Max:64cbd87293d84808af4b1aeb02757625
Switching Energy:0c3d1a172035d60faf01bd9cb62edb70
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:64ff99e605528702fb702cb855b5c549
Td (on/off) @ 25°C:7a7bb6f9a06c5b2328796625013af92f
Test Condition:197aa84f25fb875f2a7015299df96d58
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:46bb638de2ea693de650d7f1c3115468
Supplier Device Package:46bb638de2ea693de650d7f1c3115468
In Stock: 0
Stock:
0 Can Ship Immediately
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