HGTP2N120CN

HGTP2N120CN

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HGTP2N120CN
Mfr.:
Описание:
IGBT 1200V 13A 104W TO220AB
Упаковка:
Tube
Datasheet:
HGTP2N120CN Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:HGTP2N120CN
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:onsemi
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
IGBT Type:2e86438e971de59fdacd9db11a83b0fc
Voltage - Collector Emitter Breakdown (Max):edca1d2343e4e5615ce51a879f622a76
Current - Collector (Ic) (Max):b1bdc82e6c8d2f4785c10f817ccdba69
Current - Collector Pulsed (Icm):ace78b86334ed64201bccb73e319b975
Vce(on) (Max) @ Vge, Ic:1d941498b85922b352fae89163e9be2d
Power - Max:7e7162664ef337f75a21b178aedca6ea
Switching Energy:00ebdd13356574b934c4e6c61daef006
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:f75f0790402660088b22522aada78703
Td (on/off) @ 25°C:e31c950976afa758a95ecc9007f329bc
Test Condition:ed9c0882c5760b7426346724d87fa7e8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:46bb638de2ea693de650d7f1c3115468
Supplier Device Package:46bb638de2ea693de650d7f1c3115468
In Stock: 0
Stock:
0 Can Ship Immediately
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