NGB8207BNT4G

NGB8207BNT4G

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See Product Specifications

NGB8207BNT4G
Mfr.:
Описание:
INSULATED GATE BIPOLAR TRANSISTO
Упаковка:
Bulk
Datasheet:
NGB8207BNT4G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:NGB8207BNT4G
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:onsemi
Упаковка:Bulk
Product Status:ec30c235d0eb792797af1aa1d11759a7
IGBT Type:336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):43e605d2169d5085574de2ad337b0cdf
Current - Collector (Ic) (Max):ace78b86334ed64201bccb73e319b975
Current - Collector Pulsed (Icm):80048aebe005b9413929a11bba83f563
Vce(on) (Max) @ Vge, Ic:b3e409c9c7e8ef902a26d3a40da6a872
Power - Max:5d3e4f804afaee39a616b97cacf46541
Switching Energy:336d5ebc5436534e61d16e63ddfca327
Input Type:35ba1271dff4019593d3034c929e1bbc
Gate Charge:336d5ebc5436534e61d16e63ddfca327
Td (on/off) @ 25°C:336d5ebc5436534e61d16e63ddfca327
Test Condition:336d5ebc5436534e61d16e63ddfca327
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:99446f4470b43888d0c78d7d2cdfc956
Supplier Device Package:28dc10fa1251e54eadc93e4958741fed
In Stock: 800
Stock:
800 Can Ship Immediately
  • Делиться:
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