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See Product Specifications
| номер части: | NJD35N04G |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | onsemi |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 961eae0065d58eea563813a4d10cf3ac |
| Current - Collector (Ic) (Max): | 84ca31d47822b436e7a9e53e2a08b38a |
| Voltage - Collector Emitter Breakdown (Max): | 2643e7a3fc7d29359aca0ebc0993ea7b |
| Vce Saturation (Max) @ Ib, Ic: | d2988dc29e2b45df586ec00189f481b3 |
| Current - Collector Cutoff (Max): | 80ec519e19d3548e105ed3929eed58db |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 8044f6760b8fcd9c2cff59b1f64f86ec |
| Power - Max: | c1515ace21f8afcd47c5b045033089a8 |
| Frequency - Transition: | deef404953ff9441cf2d6f61decce495 |
| Operating Temperature: | 55ce755c497e7a4a96e8f6d89292982a |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | d6d5b809beb9f171e5b4097664b4dd95 |
| Supplier Device Package: | 26e4778ee70ff342a4cdee16eb8f56f1 |
