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See Product Specifications
| номер части: | NSBA115EDXV6T1G |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Производитель: | onsemi |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 3c4f188edba860ebd19850af474c12fd |
| Current - Collector (Ic) (Max): | 8fa6a3a617ed852de22fab67a97483fa |
| Voltage - Collector Emitter Breakdown (Max): | ef3fbc276cb9f08e57f243ec2875d986 |
| Resistor - Base (R1): | 76c544e459baeeba0c3270ac23232a3c |
| Resistor - Emitter Base (R2): | 76c544e459baeeba0c3270ac23232a3c |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 3d01f1a6fa5823342d1cb8c6767c6b1c |
| Vce Saturation (Max) @ Ib, Ic: | 1011826913c1880863b518e3538d73f0 |
| Current - Collector Cutoff (Max): | 53e8de3c9eceac47a1afcf3e46115044 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Power - Max: | 7a8c59f1ca1e353fce53b5236a58081c |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 86215ac6c939e87a911385cbe7e7abfb |
| Supplier Device Package: | fb675f68d3b62bcc61cc5ceecedb7c02 |
