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See Product Specifications
| номер части: | NSBA123TDP6T5G |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Производитель: | onsemi |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 3c4f188edba860ebd19850af474c12fd |
| Current - Collector (Ic) (Max): | 8fa6a3a617ed852de22fab67a97483fa |
| Voltage - Collector Emitter Breakdown (Max): | ef3fbc276cb9f08e57f243ec2875d986 |
| Resistor - Base (R1): | 6315dec285d0cfe77da662bd6cf1c65b |
| Resistor - Emitter Base (R2): | 336d5ebc5436534e61d16e63ddfca327 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | e6b876ae2f2917f381ab85d6d343ebc3 |
| Vce Saturation (Max) @ Ib, Ic: | 1011826913c1880863b518e3538d73f0 |
| Current - Collector Cutoff (Max): | 53e8de3c9eceac47a1afcf3e46115044 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Power - Max: | ae22ff412d60d5b17e257222cd66a59c |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | f58b4938ae71e781fa4437d24fdfeb8e |
| Supplier Device Package: | f58b4938ae71e781fa4437d24fdfeb8e |
