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See Product Specifications
| номер части: | NSVDTC123JET1G |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Производитель: | onsemi |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 2118df2aa458b1e26181f0df8cbeda82 |
| Current - Collector (Ic) (Max): | 63f9c0b014d9e8860c3239712547a74a |
| Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
| Resistor - Base (R1): | e85102c5e32a145a3450a496c2a5e52d |
| Resistor - Emitter Base (R2): | 942094f166c564b47b30fc312241d4ad |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 3d01f1a6fa5823342d1cb8c6767c6b1c |
| Vce Saturation (Max) @ Ib, Ic: | 260c29a9f2817a23c6c0a5d55af4e3d9 |
| Current - Collector Cutoff (Max): | 53e8de3c9eceac47a1afcf3e46115044 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Power - Max: | ffd0459b4ef502205ee3430ebd978649 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | b0007eeb26c56df960a54f9851bcc1aa |
| Supplier Device Package: | b0007eeb26c56df960a54f9851bcc1aa |
