NTD4909NAT4G

Images are for reference only
See Product Specifications

Mfr. #:

NTD4909NAT4G

Mfr.:

onsemi

Описание:

MOSFET N-CH 30V 8.8A/41A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

NTD4909NAT4G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	NTD4909NAT4G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	onsemi
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	487fe6f5c51f870a0fa51d9f066463d6
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	928dc8adcbf52eb181412b44d5f1a12d
Vgs(th) (Max) @ Id:	17ed95a87d7b17ee9a8302d07765c7da
Gate Charge (Qg) (Max) @ Vgs:	70f4ada9e23c7c5ec82a2c86a911db85
Vgs (Max):	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:	3d2096c83d0a20a8be5512a38b48f504
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26e4778ee70ff342a4cdee16eb8f56f1
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95

In Stock: 0

Stock:

0 Can Ship Immediately