NVB6412ANT4G

NVB6412ANT4G

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NVB6412ANT4G
Mfr.:
Описание:
MOSFET N-CH 100V 58A D2PAK-3
Упаковка:
Tape & Reel (TR)
Datasheet:
NVB6412ANT4G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:NVB6412ANT4G
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:onsemi
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:036d2b0bba9e9111dfcfbe4715924567
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:7f0f045ce0bd2e775cab212748c45af2
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:f1e9e5f5ca4554397dea1bfdf1aa69c6
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:d0a84cfa8029de281aa162ad84737eaf
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):0a5d5528eeabf2386035a4e8c1f9365c
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:ef8d9bdc7fb85a78ac95fcded6760658
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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