NVH4L020N120SC1

Images are for reference only
See Product Specifications

Mfr. #:

NVH4L020N120SC1

Mfr.:

onsemi

Описание:

SICFET N-CH 1200V 102A TO247

Упаковка:

Tube

Datasheet:

NVH4L020N120SC1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	NVH4L020N120SC1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	onsemi
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	ed9a2411b032b5ad765b9d5f6b1bc8e1
Drain to Source Voltage (Vdss):	edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:	4c4ce92b264f076d547238bd6ee86437
Drive Voltage (Max Rds On, Min Rds On):	c828a77388b77eed02df2bdc48ce88f8
Rds On (Max) @ Id, Vgs:	8ecf8e572ca9e8f7396a32c07c8f4c40
Vgs(th) (Max) @ Id:	1f5c9b0936edaa26b7d7fec7e62dbc2b
Gate Charge (Qg) (Max) @ Vgs:	9e50540ae80e8d6dbca6eb9adfed1871
Vgs (Max):	5e7f7fc261e3bcd7bf2dde6275c555c3
Input Capacitance (Ciss) (Max) @ Vds:	175dcb2b2fd77837005248c3c1bcbbc4
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	3d26add1a540fc9e7ba37b16822417a9
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	9c046995da32c872ed75715d3d64a881
Package / Case:	f1f05fa7d6a97ae451c8efbfb2831dfa