NVH4L080N120SC1

NVH4L080N120SC1

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NVH4L080N120SC1
Mfr.:
Описание:
SICFET N-CH 1200V 29A TO247-4
Упаковка:
Tube
Datasheet:
NVH4L080N120SC1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:NVH4L080N120SC1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:onsemi
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:ed9a2411b032b5ad765b9d5f6b1bc8e1
Drain to Source Voltage (Vdss):edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:bef208545980877d37ab67fe6329896c
Drive Voltage (Max Rds On, Min Rds On):c828a77388b77eed02df2bdc48ce88f8
Rds On (Max) @ Id, Vgs:0d354124be1403b2c2a907da4dfdc7f2
Vgs(th) (Max) @ Id:68e22da31493ff153513c0bc3eb15358
Gate Charge (Qg) (Max) @ Vgs:113b08677cec773d74ef575a61e7b912
Vgs (Max):5e7f7fc261e3bcd7bf2dde6275c555c3
Input Capacitance (Ciss) (Max) @ Vds:1a951de143d974158c33d9d219c05c1f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):38bdde822b4513c13b981f1fb27dc07c
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:9c046995da32c872ed75715d3d64a881
Package / Case:f1f05fa7d6a97ae451c8efbfb2831dfa
In Stock: 0
Stock:
0 Can Ship Immediately
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