FJ4B01100L1

FJ4B01100L1

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FJ4B01100L1
Описание:
MOSFET P-CH 12V 2.2A XLGA004
Упаковка:
Tape & Reel (TR)
Datasheet:
FJ4B01100L1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:FJ4B01100L1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panasonic Electronic Components
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):fd06a160a7273ee2b718dbba07f948a2
Current - Continuous Drain (Id) @ 25°C:a706b8a1f5f0546d11d640a64934445a
Drive Voltage (Max Rds On, Min Rds On):c20b0e732e8e50ac667a2996b676523a
Rds On (Max) @ Id, Vgs:ee0f847b256f23c3a22dac5a3fa2c05d
Vgs(th) (Max) @ Id:e8fe65942a40d977eb654889d8991762
Gate Charge (Qg) (Max) @ Vgs:95a46df4e8a96cd3803497676542d778
Vgs (Max):141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:c7a7abafb8d0374bb3f99186db7b30a2
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):1d0028dcfdaf544ba97f5a1765a0ee7e
Operating Temperature:a0642ad5458e4dac9a3b9b1a9a5604fd
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:ce67526bc1c58230862e080a6b7f817b
Package / Case:b9f038f53826fd9b71581f3d9b4cc9d5
In Stock: 0
Stock:
0 Can Ship Immediately
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