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2EZ10_R2_00001

2EZ10_R2_00001

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2EZ10_R2_00001
Mfr.:
Описание:
SILICON ZENER DIODE
Упаковка:
Tape & Reel (TR)
Datasheet:
2EZ10_R2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2EZ10_R2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Zener - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Voltage - Zener (Nom) (Vz):62988440d6f16bbab8394bac9cac23d4
Tolerance:0673ab43ee41b7a35a916de94bd56ab4
Power - Max:b8a311ed3f21d724b699490a1101fe1b
Impedance (Max) (Zzt):1501d54e75aa79fb55fa825079dc7c50
Current - Reverse Leakage @ Vr:77cf63ab3d274806798259a9a7d8a76f
Voltage - Forward (Vf) (Max) @ If:336d5ebc5436534e61d16e63ddfca327
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:46e8f8d45cd274df397b3780ecf20b1a
Supplier Device Package:df65390c442b655605ed47fd06eb7c07
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BZT52-C75-AU_R1_000A1
BZT52-C75-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZD27B82P-HE3-08
BZD27B82P-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 82V 800MW DO219AB
BZD27C3V6P-HE3-08
BZD27C3V6P-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.6V 800MW DO219AB
1PMT4129/TR7
1PMT4129/TR7
Microchip Technology
DIODE ZENER 62V 1W DO216
JANTXV1N4958US/TR
JANTXV1N4958US/TR
Microchip Technology
VOLTAGE REGULATOR
JANTXV1N750DUR-1
JANTXV1N750DUR-1
Microchip Technology
DIODE ZENER 4.7V 500MW DO213AA
JANS1N6348CUS
JANS1N6348CUS
Microchip Technology
VOLTAGE REGULATOR
VLZ5V6C-GS08
VLZ5V6C-GS08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.76V 500MW SOD80
JAN1N6355D
JAN1N6355D
Microchip Technology
ZENER DIODE
JANTXV1N3336RB
JANTXV1N3336RB
Microchip Technology
ZENER DIODE
CZRL55C13-G
CZRL55C13-G
Comchip Technology
DIODE ZENER 13V 500MW SOD80
KDZVTR2.7B
KDZVTR2.7B
Rohm Semiconductor
DIODE ZENER 2.7V 1W PMDU
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