BAV21W_R1_00001

BAV21W_R1_00001

Images are for reference only
See Product Specifications

BAV21W_R1_00001
Описание:
SOD-123, SWITCHING
Упаковка:
Tape & Reel (TR)
Datasheet:
BAV21W_R1_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:BAV21W_R1_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):b86aa01bc1f9484a191794819edcfc06
Current - Average Rectified (Io):a13a0fe80feeeb74ed316cbc7652b427
Voltage - Forward (Vf) (Max) @ If:f1bd51161f988ed2836f575b91122550
Speed:a0189688e63fa3c4576aed928f6b00f7
Reverse Recovery Time (trr):b0d7994e039b4509c995ea8ecaf1bb5d
Current - Reverse Leakage @ Vr:c57609001369ca035dda6051d3a952b5
Capacitance @ Vr, F:8636d4b0e49d865b5341fbc1210e060d
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:38720fb1204233a09f6629a12a958481
Supplier Device Package:38720fb1204233a09f6629a12a958481
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 35140
Stock:
35140 Can Ship Immediately
  • Делиться:
Для использования с
NTE573-1
NTE573-1
NTE Electronics, Inc
R-SCHOTTKY BARRIER 100V5A
ES1JAL
ES1JAL
Taiwan Semiconductor Corporation
35NS, 1A, 600V, SUPER FAST RECOV
US1M-M3/5AT
US1M-M3/5AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO214AC
CDBA2150-HF
CDBA2150-HF
Comchip Technology
DIODE SCHOTTKY 150V 2A DO214AC
RU 3MV
RU 3MV
Sanken
DIODE GEN PURP 400V 1.5A AXIAL
BYW74-L36
BYW74-L36
Vishay General Semiconductor - Diodes Division
DIODE AVAL 3A 400V SOD64
MBRH12080R
MBRH12080R
GeneSiC Semiconductor
DIODE SCHOTTKY 80V 120A D-67
VS-SD800C45L
VS-SD800C45L
Vishay General Semiconductor - Diodes Division
DIODE GP 4.5KV 1065A DO200AB
PS415014
PS415014
Powerex Inc.
DIODE MODULE SINGLE
MPG06JHE3/54
MPG06JHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A MPG06
D475N36BXPSA1
D475N36BXPSA1
Infineon Technologies
DIODE GEN PURP 3.6KV 475A
CMH02A(TE12L,Q,M)
CMH02A(TE12L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 400V 3A M-FLAT
Вас также может заинтересовать
P4SMAJ200AS_R1_00001
P4SMAJ200AS_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P6KE62CA_R2_00001
P6KE62CA_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
PE4220CS_R1_00001
PE4220CS_R1_00001
Panjit International Inc.
HI-SURGE ESD PROTECTION
MBR1680DC_R2_00001
MBR1680DC_R2_00001
Panjit International Inc.
D PAK SURFACE SCHOTTKY BARRIER R
BD560S_S2_00001
BD560S_S2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
GS1M-AU_R1_000A1
GS1M-AU_R1_000A1
Panjit International Inc.
SMA, GENERAL
MMSZ5242B_R1_00001
MMSZ5242B_R1_00001
Panjit International Inc.
SOD-123, ZENER
BZX584C16-AU_R1_000A1
BZX584C16-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PZ1AH30B-AU_R1_000A1
PZ1AH30B-AU_R1_000A1
Panjit International Inc.
SILICON ZENER DIODE
BC856BW_R1_00001
BC856BW_R1_00001
Panjit International Inc.
TRANS PNP 65V 0.1A SOT323
PBHV9110DH-AU_R1_000A1
PBHV9110DH-AU_R1_000A1
Panjit International Inc.
TRANS PNP 100V 1A SOT89
PJA3404-AU_R1_000A1
PJA3404-AU_R1_000A1
Panjit International Inc.
SOT-23, MOSFET