BD8150S_L2_00001

BD8150S_L2_00001

Images are for reference only
See Product Specifications

BD8150S_L2_00001
Описание:
SURFACE MOUNT SCHOTTKY BARRIER R
Упаковка:
Tape & Reel (TR)
Datasheet:
BD8150S_L2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:BD8150S_L2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):f5857b5c2d0b94d156ab7cc94df182c6
Current - Average Rectified (Io):aef4533582e3b78f1bc369aaf4ae62ba
Voltage - Forward (Vf) (Max) @ If:7a41a235f0d7f1e66825ed344e7d1f63
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:f4efaa5a447cc68840a90da0c18315de
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
Supplier Device Package:26334f21813abf4634f508e2476262a0
Operating Temperature - Junction:1a1a7862b3b5abe85ab6bb63480bbb5f
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
ES2G-13-F
ES2G-13-F
Diodes Incorporated
DIODE GEN PURP 400V 2A SMB
1N459TR
1N459TR
onsemi
DIODE GEN PURP 200V 500MA DO35
FR105A-G
FR105A-G
Comchip Technology
RECTIFIER FAST RECOVERY 600V 1A
SS33-E3/9AT
SS33-E3/9AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 3A DO214AB
ES3DH
ES3DH
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
FR40G05
FR40G05
GeneSiC Semiconductor
DIODE GEN PURP 400V 40A DO5
JAN1N5809URS
JAN1N5809URS
Microchip Technology
DIODE GEN PURP 100V 3A BPKG
MA2SD3200L
MA2SD3200L
Panasonic Electronic Components
DIODE SCHOTTKY 30V 200MA SSMINI2
GI816-E3/73
GI816-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO204AC
SS12L RFG
SS12L RFG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A SUB SMA
SFF1008GAHC0G
SFF1008GAHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A ITO220AB
PMEG1201AESF/S50YL
PMEG1201AESF/S50YL
NXP USA Inc.
PMEG1201AESF/S50YL
Вас также может заинтересовать
PJSD15W_R1_00001
PJSD15W_R1_00001
Panjit International Inc.
SOD-323, TVS/ESD
P6SMB400A_R1_00001
P6SMB400A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4SMAJ110CA_R1_00001
P4SMAJ110CA_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4HE9.0A_R1_00001
P4HE9.0A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P6SMB91AS_R1_00001
P6SMB91AS_R1_00001
Panjit International Inc.
TRANSIENT VOLTAGE SUPPRESSOR
1.5SMCJ7.0A_R1_00001
1.5SMCJ7.0A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
SS2020FL_R1_00001
SS2020FL_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
BZX84C6V2TW_R1_00001
BZX84C6V2TW_R1_00001
Panjit International Inc.
TRIPLE ISOLATED SURFACE MOUNT ZE
MMSZ5245B_R1_00001
MMSZ5245B_R1_00001
Panjit International Inc.
SOD-123, ZENER
MMSZ5250B-AU_R1_000A1
MMSZ5250B-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84C36W_R1_00001
BZX84C36W_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PJQ5846-AU_R2_000A1
PJQ5846-AU_R2_000A1
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M