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DI108S_T0_00001

DI108S_T0_00001

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See Product Specifications

DI108S_T0_00001
Mfr.:
Описание:
SURFACE MOUNT GLASS PASSIVATED S
Упаковка:
Tube
Datasheet:
DI108S_T0_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DI108S_T0_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Bridge Rectifiers
Производитель:Panjit International Inc.
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:04d59a4f67a72cfc8a6f8046b91ff693
Technology:eb6d8ae6f20283755b339c0dc273988b
Voltage - Peak Reverse (Max):faca79d8bea430c6302af6f2e2f59d12
Current - Average Rectified (Io):e61c2e8e49eca0e4942ddb2b339c10b0
Voltage - Forward (Vf) (Max) @ If:50843c8b4f2ebc6ab98b8d8833a54de0
Current - Reverse Leakage @ Vr:f919a7d3e2c66b1de6403d6aeb9d6ca8
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:101477a309da38dc2fcceed5a2d2cb07
Supplier Device Package:772a1252ba0d563f3899152642498bc7
In Stock: 50
Stock:
50 Can Ship Immediately
  • Делиться:
Для использования с
VS-60MT120KPBF
VS-60MT120KPBF
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 3P 1.6KV 60A MT-K
VS-110MT120KPBF
VS-110MT120KPBF
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 3P 1.2KV 110A MT-K
RMB2S-E3/80
RMB2S-E3/80
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 3P 200V TO269AA
BABS2100
BABS2100
Diodes Incorporated
PLANAR SCHOTTKY RECTIFIER ABS/SO
SBR2
SBR2
Semtech Corporation
BRIDGE RECT 1PHASE 200V 1.5A
684-5
684-5
Microchip Technology
BRIDGE RECTIFIER
EMD2S
EMD2S
Rectron USA
BRIDGE RECT GLASS 100V 1A MDS
53MT80KB
53MT80KB
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 3PHASE 800V 55A MTK
GBPC104-E4/51
GBPC104-E4/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 400V 2A GBPC1
KBU2508-G
KBU2508-G
Comchip Technology
BRIDGE RECT 1PHASE 800V 3.6A KBU
TS20P04GHC2G
TS20P04GHC2G
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 400V 20A TS-6P
KBJL802G-BP
KBJL802G-BP
Micro Commercial Co
DIODE BRIDGE KBJL
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