ED306S_S2_00001

ED306S_S2_00001

Images are for reference only
See Product Specifications

ED306S_S2_00001
Описание:
SUPERFAST RECOVERY RECTIFIERS
Упаковка:
Tape & Reel (TR)
Datasheet:
ED306S_S2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:ED306S_S2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):657dae0913ee12be6fb2a6f687aae1c7
Voltage - Forward (Vf) (Max) @ If:66fad5bf4f2103828f0098baefa8d854
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):48dba8a956af0ff23e20e7f01121a45e
Current - Reverse Leakage @ Vr:4b88d1c2cf26197f10a93c9fe12962bb
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
Supplier Device Package:26334f21813abf4634f508e2476262a0
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 3000
Stock:
3000 Can Ship Immediately
  • Делиться:
Для использования с
S2JHE3_A/H
S2JHE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1.5A DO214AA
AS1M-HF
AS1M-HF
Comchip Technology
AUTOMOTIVE RECTIFIER GEN PURP 10
DPG10I200PM
DPG10I200PM
IXYS
DIODE GEN PURP 200V 10A TO220FP
UG4A-E3/73
UG4A-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 4A DO201AD
RG 10AV1
RG 10AV1
Sanken
DIODE GEN PURP 600V 1A AXIAL
UTR60/TR
UTR60/TR
Microchip Technology
UFR,FRR
R7S01608XX
R7S01608XX
Powerex Inc.
DIODE GP 1.6KV 800A DO200AA R62
B350A-13
B350A-13
Diodes Incorporated
DIODE SCHOTTKY 50V 3A SMA
1N4003GPHE3/54
1N4003GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AL
JANTX1N3170R
JANTX1N3170R
Microchip Technology
DIODE GEN PURP 600V 300A DO9
SBRS8130LT3G
SBRS8130LT3G
onsemi
DIODE SCHOTTKY 30V 1A SMB
CLS03(TE16L,DNSO,Q
CLS03(TE16L,DNSO,Q
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 60V 10A L-FLAT
Вас также может заинтересовать
P4HE48A-AU_R1_000A1
P4HE48A-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
3.0SMCJ170A_R1_00001
3.0SMCJ170A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
3KP8.5CA_R2_00001
3KP8.5CA_R2_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
3KP48A_R2_00001
3KP48A_R2_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5KE68A_R2_00001
1.5KE68A_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
MBR850DC_R2_00001
MBR850DC_R2_00001
Panjit International Inc.
D PAK SURFACE MOUNT SCHOTTKY BAR
MBR1660CT_T0_00001
MBR1660CT_T0_00001
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIERS
BZT52-C62-AU_R1_000A1
BZT52-C62-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZT52-B33_R1_00001
BZT52-B33_R1_00001
Panjit International Inc.
SOD-123, ZENER
1N5339B_R2_00001
1N5339B_R2_00001
Panjit International Inc.
SILICON ZENER DIODE
PZS516V2BAS-AU_R1_000A1
PZS516V2BAS-AU_R1_000A1
Panjit International Inc.
SILICON ZENER DIODE
PJMB130N65EC_R2_00601
PJMB130N65EC_R2_00601
Panjit International Inc.
650V/ 130MOHM / 29A/ EASY TO DRI