Logo Logo
0
Мой запрос предложений
English


ER201_R2_00001

ER201_R2_00001

Images are for reference only
See Product Specifications

ER201_R2_00001
Mfr.:
Описание:
GLASS PASSIVATED SUPERFAST RECOV
Упаковка:
Tape & Reel (TR)
Datasheet:
ER201_R2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:ER201_R2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):227b5c7c7a2ed2ea3da210ed0860030d
Current - Average Rectified (Io):5f5468d54f2b86e7e60fac196581d7d0
Voltage - Forward (Vf) (Max) @ If:0c04067bc236a1446e7a588460a9be27
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):48dba8a956af0ff23e20e7f01121a45e
Current - Reverse Leakage @ Vr:66e915a0858818ea60c861f87462e2be
Capacitance @ Vr, F:8e68575a1eaccdf15a23ab2c72d60df9
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:46e8f8d45cd274df397b3780ecf20b1a
Supplier Device Package:df65390c442b655605ed47fd06eb7c07
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
RS3K-E3/9AT
RS3K-E3/9AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 3A DO214AB
40HF100
40HF100
Solid State Inc.
DO5 40 AMP SILICON RECTFIER KK
JANTX1N6663
JANTX1N6663
Microchip Technology
DIODE GEN PURP 600V 500MA DO35
VS-CPU6006LHN3
VS-CPU6006LHN3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 30A TO247AD
MBRB760-E3/45
MBRB760-E3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 7.5A TO263AB
S4230
S4230
Microchip Technology
STD RECTIFIER
RA203420XX
RA203420XX
Powerex Inc.
DIODE GP 3.4KV 2000A POWRDISC
IRD3CH82DB6
IRD3CH82DB6
Infineon Technologies
DIODE GEN PURP 1.2KV 150A DIE
SR006HA0G
SR006HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 500MA DO204AL
D820N26TXPSA1
D820N26TXPSA1
Infineon Technologies
DIODE GEN PURP 2.6KV 820A
S1GLS RVG
S1GLS RVG
Taiwan Semiconductor Corporation
DIODE, 1.2A, 400V, SOD-123HE
SIDC08D60C8X1SA1
SIDC08D60C8X1SA1
Infineon Technologies
DIODE GEN PURP 600V 30A WAFER
Вас также может заинтересовать
PJSD12TM_R1_00001
PJSD12TM_R1_00001
Panjit International Inc.
ESD PROTECTION DIODES
P4SMAJ64CAS_R1_00001
P4SMAJ64CAS_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5SMCJ180AS_R1_00001
1.5SMCJ180AS_R1_00001
Panjit International Inc.
TRANSIENT VOLTAGE SUPPRESSOR
P6KE150CA_R2_00001
P6KE150CA_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
SM6S18A-AU_R2_000A1
SM6S18A-AU_R2_000A1
Panjit International Inc.
4.6KW SURFACE MOUNT TRANSIENT VO
BAS70ADW-AU_R1_000A1
BAS70ADW-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SCHOTTKY DIODE
SBM250L_AY_00001
SBM250L_AY_00001
Panjit International Inc.
ULTRA LOW VF SCHOTTKY RECTIFIER
BZT52-C9V1-AU_R1_000A1
BZT52-C9V1-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BC807-40_R1_00001
BC807-40_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.5A SOT23
BC850B-AU_R1_000A1
BC850B-AU_R1_000A1
Panjit International Inc.
TRANS NPN 45V 0.1A SOT23
PJD14P06A_L2_00001
PJD14P06A_L2_00001
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
PJP10NA60_T0_00001
PJP10NA60_T0_00001
Panjit International Inc.
600V N-CHANNEL MOSFET