ES2E_R1_00001

ES2E_R1_00001

Images are for reference only
See Product Specifications

ES2E_R1_00001
Описание:
SURFACE MOUNT SUPER FAST RECOVER
Упаковка:
Tape & Reel (TR)
Datasheet:
ES2E_R1_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:ES2E_R1_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):7990209dc00c5b5db65871c8bf669854
Current - Average Rectified (Io):5f5468d54f2b86e7e60fac196581d7d0
Voltage - Forward (Vf) (Max) @ If:9b259d0eb6ae8b9bd3d1f0ddc6139cff
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):48dba8a956af0ff23e20e7f01121a45e
Current - Reverse Leakage @ Vr:89bfdd84780755013ced478de00a7ac1
Capacitance @ Vr, F:a57806ff7c07347f7b063fff8bb8613e
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:555ea86cb0cf881219ebf93c4aec37e1
Supplier Device Package:7a414fd9d8fc3b6ddbd9c6158b96f8f6
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
B180Q-13-F
B180Q-13-F
Diodes Incorporated
DIODE SCHOTTKY 80V 1A SMA
HSB2836JTR-E
HSB2836JTR-E
Renesas Electronics America Inc
PLANAR DIODE
SS10100HE-AU_R1_000A1
SS10100HE-AU_R1_000A1
Panjit International Inc.
SOD-123HE, SKY
SB520E-G
SB520E-G
Comchip Technology
DIODE SCHOTTKY 20V 5A DO201AD
IDH05G65C5XKSA2
IDH05G65C5XKSA2
Infineon Technologies
DIODE SCHOTTKY 650V 5A TO220-2
JAN1N1204AR
JAN1N1204AR
Microchip Technology
DIODE GEN PURP 400V 12A DO203AA
1N3909A
1N3909A
Microchip Technology
FAST RECOVERY RECTIFIER
MDO500-20N1
MDO500-20N1
IXYS
DIODE GEN PURP 2KV 560A Y1-CU
RGP10MEHE3/54
RGP10MEHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
SBLB1040-E3/45
SBLB1040-E3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 10A TO263AB
UGB5JTHE3/45
UGB5JTHE3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 5A TO263AB
BA158G A0G
BA158G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
Вас также может заинтересовать
P4SMAJ200AS_R1_00001
P4SMAJ200AS_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4KE20C_R2_00001
P4KE20C_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
P4SMA250_R1_00001
P4SMA250_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P6KE33A_R2_00001
P6KE33A_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
MBR10H150CT_T0_00001
MBR10H150CT_T0_00001
Panjit International Inc.
ULTRA LOW IR SCHOTTKY BARRIER RE
FR3D_R1_00001
FR3D_R1_00001
Panjit International Inc.
FAST SWITCHING SURFACE MOUNT REC
QR1506_T0_00001
QR1506_T0_00001
Panjit International Inc.
TO-220AC, FRED
BZX84C8V2TW_R1_00001
BZX84C8V2TW_R1_00001
Panjit International Inc.
TRIPLE ISOLATED SURFACE MOUNT ZE
BZT52-B14S-AU_R1_000A1
BZT52-B14S-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PZS5256BCH_R1_00001
PZS5256BCH_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZT52-C3V9S_R1_00001
BZT52-C3V9S_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PJW2P10A_R2_00001
PJW2P10A_R2_00001
Panjit International Inc.
100V P-CHANNEL ENHANCEMENT MODE