GS1006HE_R1_00001

GS1006HE_R1_00001

Images are for reference only
See Product Specifications

GS1006HE_R1_00001
Описание:
SURFACE GENERAL PURPOSE RECTIFIE
Упаковка:
Tape & Reel (TR)
Datasheet:
GS1006HE_R1_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GS1006HE_R1_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):0723dfd10075aee37a1804a728349dc3
Voltage - Forward (Vf) (Max) @ If:50843c8b4f2ebc6ab98b8d8833a54de0
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:4b88d1c2cf26197f10a93c9fe12962bb
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:06f474fc938d37d2a61a7379fd2217fc
Supplier Device Package:2b5cc613467eec4671ab7acbd7334e1a
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 3000
Stock:
3000 Can Ship Immediately
  • Делиться:
Для использования с
PDS835L-13
PDS835L-13
Diodes Incorporated
DIODE SCHOTTKY 35V 8A POWERDI5
NRVB140SFT3G
NRVB140SFT3G
onsemi
DIODE SCHOTTKY 40V 1A SOD123
UJ3D1210KS
UJ3D1210KS
UnitedSiC
1200V 10A SIC SCHOTTKY DIODE G3,
PMEG3010ESBCYL
PMEG3010ESBCYL
Nexperia USA Inc.
PMEG3010ESB - 30V, 1A LOW VF MEG
R2000FG
R2000FG
Rectron USA
DIODE GEN PURP 2000V 500MA DO41
MPG06MHE3_A/53
MPG06MHE3_A/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A MPG06
SD200SCU150A.T1
SD200SCU150A.T1
SMC Diode Solutions
PIV 150V IO 60A CHIP SIZE 200MIL
10BQ040TR
10BQ040TR
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 1A SMB
1N483BTR
1N483BTR
onsemi
DIODE GEN PURP 80V 200MA DO35
UHB10FT-E3/8W
UHB10FT-E3/8W
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 10A D2PAK
BYM07-200HE3/83
BYM07-200HE3/83
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 500MA DO213
S12KCHM6G
S12KCHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 12A DO214AB
Вас также может заинтересовать
3.0SMCJ26CA_R1_00001
3.0SMCJ26CA_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4SMAJ70CA-AU_R1_000A1
P4SMAJ70CA-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4FL45A-AU_R1_000A1
P4FL45A-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
ED604CS_L2_00001
ED604CS_L2_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
UF2010G_R2_00001
UF2010G_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION ULTRAF
MB16_R1_00001
MB16_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
DZ23C12_R1_00001
DZ23C12_R1_00001
Panjit International Inc.
DUAL SURFACE MOUNT ZENER DIODES
BZX84C12-AU_R1_000A1
BZX84C12-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BCP53-16-AU_R2_000A1
BCP53-16-AU_R2_000A1
Panjit International Inc.
TRANS PNP 100V 1A SOT223
PJS6809_S1_00001
PJS6809_S1_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
PJF5NA80_T0_00001
PJF5NA80_T0_00001
Panjit International Inc.
800V N-CHANNEL MOSFET
PJZ18NA50_T0_10001
PJZ18NA50_T0_10001
Panjit International Inc.
MOSFET