GS2006HE_R1_00001

GS2006HE_R1_00001

Images are for reference only
See Product Specifications

GS2006HE_R1_00001
Описание:
SURFACE MOUNT RECTIFIER
Упаковка:
Tape & Reel (TR)
Datasheet:
GS2006HE_R1_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GS2006HE_R1_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):5f5468d54f2b86e7e60fac196581d7d0
Voltage - Forward (Vf) (Max) @ If:4e5b88e9d7b5695b5e60e99a63d5be95
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:4b88d1c2cf26197f10a93c9fe12962bb
Capacitance @ Vr, F:fd87e8d0ceb349b2ea20fbe157edb5e2
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:06f474fc938d37d2a61a7379fd2217fc
Supplier Device Package:2b5cc613467eec4671ab7acbd7334e1a
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
1N5550
1N5550
Microchip Technology
DIODE GEN PURP 200V 3A AXIAL
BAV116W-7-F
BAV116W-7-F
Diodes Incorporated
DIODE GEN PURP 130V 215MA SOD123
ESH1D
ESH1D
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AC
MBR6035R
MBR6035R
GeneSiC Semiconductor
DIODE SCHOTTKY REV 35V DO5
VS-SD803C10S10C
VS-SD803C10S10C
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 845A B-43
688-15
688-15
Microchip Technology
HIGH VOLTAGE RECTIFIER
GI818-E3/54
GI818-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AC
VS-STT170M14MPBF
VS-STT170M14MPBF
Vishay General Semiconductor - Diodes Division
MODULE DIODE MAP COMPRESSED
CLLRH-07 BK
CLLRH-07 BK
Central Semiconductor Corp
DIODE GP 700V 500MA SOD80
HS1GL MHG
HS1GL MHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
JAN1N3913
JAN1N3913
Microchip Technology
RECTIFIER
HS5G R6G
HS5G R6G
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
Вас также может заинтересовать
P4SMAJ54CAS_R1_00001
P4SMAJ54CAS_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P1CH18A-AU_R1_000A1
P1CH18A-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P6SMB12A-AU_R1_000A1
P6SMB12A-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
MBR20100DC-AU_R2_000A1
MBR20100DC-AU_R2_000A1
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIER
UF1006F_T0_00001
UF1006F_T0_00001
Panjit International Inc.
ULTRA FAST RECOVERY RECTIFIERS
PG4007_R2_00001
PG4007_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION RECTIF
GS1BWG_R1_00001
GS1BWG_R1_00001
Panjit International Inc.
SURFACE MOUNT GENERAL PURPOSE RE
PG600A_R2_00001
PG600A_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION PLASTI
BZX584C5V6-AU_R1_000A1
BZX584C5V6-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
1SMB3EZ6.2_R1_00001
1SMB3EZ6.2_R1_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION SILICO
PJD50P04-AU_L2_000A1
PJD50P04-AU_L2_000A1
Panjit International Inc.
40V P-CHANNEL ENHANCEMENT MODE M
PJF9NA90_T0_00001
PJF9NA90_T0_00001
Panjit International Inc.
900V N-CHANNEL MOSFET