MBR1080F_T0_00001

MBR1080F_T0_00001

Images are for reference only
See Product Specifications

MBR1080F_T0_00001
Описание:
10 AMPERES SCHOTTKY BARRIER RECT
Упаковка:
Tube
Datasheet:
MBR1080F_T0_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MBR1080F_T0_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Panjit International Inc.
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):ebd7aaeec2792ddf9fe1af48370ec717
Current - Average Rectified (Io):600f6857f966a3ecb5ca3022150669c1
Voltage - Forward (Vf) (Max) @ If:32ef9557b3119b4ef32d7e9a9de0211e
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:bed33f8b977fd5ce60a20777c6d81c11
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:fc6f357330fa184e9998acb044dda22d
Supplier Device Package:7ea579c277adc763ea1450ddd666bb34
Operating Temperature - Junction:1a1a7862b3b5abe85ab6bb63480bbb5f
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BAS21QC-QZ
BAS21QC-QZ
Nexperia USA Inc.
BAS21QC-Q/SOT8009/DFN1412D-3
SE20PGHM3/85A
SE20PGHM3/85A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1.6A DO220AA
SS29HE3_A/H
SS29HE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 90V 1.5A DO214AA
1N5398GP-E3/54
1N5398GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1.5A DO204AC
NSB8BTHE3_B/I
NSB8BTHE3_B/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 8A TO263AB
1N2797
1N2797
Microchip Technology
STD RECTIFIER
G3S06503C
G3S06503C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 3A 2-PIN
IDK08G65C5XTMA1
IDK08G65C5XTMA1
Infineon Technologies
DIODE SCHOTTKY 650V 8A TO263-2
FR1001GP-AP
FR1001GP-AP
Micro Commercial Co
DIODE GPP FAST 10A R-6
1F5-AP
1F5-AP
Micro Commercial Co
DIODE GPP FAST 1A R-1
1N5392-AP
1N5392-AP
Micro Commercial Co
DIODE GPP 1.5A DO-15
1N4007GH A0G
1N4007GH A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 1000V DO-41
Вас также может заинтересовать
P4SMAJ75A_R1_00001
P4SMAJ75A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
PJSD05W_R1_00001
PJSD05W_R1_00001
Panjit International Inc.
SOD-323, TVS/ESD
P4KE13CAS_AY_00001
P4KE13CAS_AY_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4KE250AS_AY_00001
P4KE250AS_AY_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4SMA27_R1_00001
P4SMA27_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5SMCJ18CA_R1_00001
1.5SMCJ18CA_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
SBA240AH_R1_00001
SBA240AH_R1_00001
Panjit International Inc.
EXTREME LOW VF SCHOTTKY RECTIFIE
S2KGF_R1_00001
S2KGF_R1_00001
Panjit International Inc.
SURFACE MOUNT RECTIFIER
1SMA5936-AU_R2_000A1
1SMA5936-AU_R2_000A1
Panjit International Inc.
SILICON ZENER DIODE
1SMB3EZ7.5_R1_00001
1SMB3EZ7.5_R1_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION SILICO
BC856BW_R1_00001
BC856BW_R1_00001
Panjit International Inc.
TRANS PNP 65V 0.1A SOT323
PJF4NA60_T0_00001
PJF4NA60_T0_00001
Panjit International Inc.
600V N-CHANNEL MOSFET