MBR1200_R2_00001

MBR1200_R2_00001

Images are for reference only
See Product Specifications

MBR1200_R2_00001
Описание:
SCHOTTKY BARRIER RECTIFIERS
Упаковка:
Tape & Reel (TR)
Datasheet:
MBR1200_R2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MBR1200_R2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):b86aa01bc1f9484a191794819edcfc06
Current - Average Rectified (Io):0723dfd10075aee37a1804a728349dc3
Voltage - Forward (Vf) (Max) @ If:700540b615ecf962f4eadd636bfebe03
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:e375a769c3f3955a76c9d903da6d349f
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d91f9d94af13eee9be6db2c0abc9eaa6
Supplier Device Package:b318f38b1083e81282352a6a05a1af0e
Operating Temperature - Junction:1a1a7862b3b5abe85ab6bb63480bbb5f
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BAS16WT1G
BAS16WT1G
onsemi
DIODE GEN PURP 100V 200MA SC70-3
UF5404-E3/73
UF5404-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 3A DO201AD
SB01-15NP
SB01-15NP
onsemi
RECTIFIER DIODE, SCHOTTKY
EGL41D-E3/96
EGL41D-E3/96
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO213AB
JANTX1N5617
JANTX1N5617
Microchip Technology
DIODE GEN PURP 400V 1A AXIAL
1N5400GP-TP
1N5400GP-TP
Micro Commercial Co
DIODE GEN PURP 50V 3A DO201AD
EGF1C-E3/67A
EGF1C-E3/67A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 1A DO214BA
DPF60IM400HB
DPF60IM400HB
IXYS
DIODE GEN PURP 400V 60A TO247AD
VS-1N1204A
VS-1N1204A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 12A DO203AA
BAT54ZFILM
BAT54ZFILM
STMicroelectronics
DIODE SCHOTTKY 40V 300MA SOD123
CD214B-R3800
CD214B-R3800
Bourns Inc.
DIODE GEN PURP 800V 3A SMB
VS-30ETH06STRRPBF
VS-30ETH06STRRPBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 30A TO263AB
Вас также может заинтересовать
1.5SMCJ48A_R1_00001
1.5SMCJ48A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P6SMBJ45CA_R1_00001
P6SMBJ45CA_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P1CH22A-AU_R1_000A1
P1CH22A-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P6KE220AS_AY_00001
P6KE220AS_AY_00001
Panjit International Inc.
TRANSIENT VOLTAGE SUPPRESSOR
1.5KE16A_R2_00001
1.5KE16A_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
1.5KE180CAS_AY_00001
1.5KE180CAS_AY_00001
Panjit International Inc.
TVS 1500W 180V BIDIR DO-201AE
SK56L_R1_00001
SK56L_R1_00001
Panjit International Inc.
SMC, SKY
PZ1AL28B_R1_00001
PZ1AL28B_R1_00001
Panjit International Inc.
SILICON ZENER DIODE
1SMB5927-AU_R1_000A1
1SMB5927-AU_R1_000A1
Panjit International Inc.
SILICON ZENER DIODE
1SMB2EZ8.7_R1_00001
1SMB2EZ8.7_R1_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION SILICO
PJT7801_R1_00001
PJT7801_R1_00001
Panjit International Inc.
20V P-CHANNEL ENHANCEMENT MODE M
PJD5P10A_L2_00001
PJD5P10A_L2_00001
Panjit International Inc.
100V P-CHANNEL ENHANCEMENT MODE