MBR860_T0_00001

MBR860_T0_00001

Images are for reference only
See Product Specifications

MBR860_T0_00001
Описание:
SCHOTTKY BARRIER RECTIFIERS
Упаковка:
Tube
Datasheet:
MBR860_T0_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MBR860_T0_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Panjit International Inc.
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):5568a11e95c42251b4839598cb5b4518
Current - Average Rectified (Io):aef4533582e3b78f1bc369aaf4ae62ba
Voltage - Forward (Vf) (Max) @ If:d886af9b75d9475ecdad2e73837d96e1
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:55a9edd4470fb5a4971556c6a440c508
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d292e75da6784e098598da0a8c4cc46b
Supplier Device Package:6425437fc133c9e30bbea849e97c14c1
Operating Temperature - Junction:1a1a7862b3b5abe85ab6bb63480bbb5f
In Stock: 1995
Stock:
1995 Can Ship Immediately
  • Делиться:
Для использования с
S3GB R5G
S3GB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AA
1N1342RB
1N1342RB
Solid State Inc.
DO4 6 AMP SILICON RECTIFIER
MBRA130LT3G
MBRA130LT3G
onsemi
DIODE SCHOTTKY 30V 1A SMA
BAV21W-HE3-08
BAV21W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
SVT10120V_R1_00001
SVT10120V_R1_00001
Panjit International Inc.
ULTRA LOW VF SCHOTTKY BARRIER RE
ES3BHE3_A/H
ES3BHE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 3A DO214AB
SD125SC150B.T1
SD125SC150B.T1
SMC Diode Solutions
PIV 150V IO 15A CHIP SIZE 125MIL
JANTX1N5623US/TR
JANTX1N5623US/TR
Microchip Technology
RECTIFIER UFR,FRR
JANTXV1N5819-1
JANTXV1N5819-1
Microchip Technology
DIODE SCHOTTKY 45V 1A DO41
RGP10MHE3/54
RGP10MHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
ES1AHM2G
ES1AHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO214AC
F1T2G A1G
F1T2G A1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A TS-1
Вас также может заинтересовать
1.5SMCJ54A_R1_00001
1.5SMCJ54A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4KE13A_R2_00001
P4KE13A_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
P4HE7.5A_R1_00001
P4HE7.5A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5SMC75A-AU_R1_000A1
1.5SMC75A-AU_R1_000A1
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
3KP6.5CA_R2_00001
3KP6.5CA_R2_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5KE51CAS_AY_00001
1.5KE51CAS_AY_00001
Panjit International Inc.
TVS 1500W 51V BIDIR DO-201AE
BAT54W-AU_R1_000A1
BAT54W-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SCHOTTKY DIODE
MUR260K_AY_00001
MUR260K_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
BZX84C27TW_R1_00001
BZX84C27TW_R1_00001
Panjit International Inc.
TRIPLE ISOLATED SURFACE MOUNT ZE
PZS514V7BCH_R1_00001
PZS514V7BCH_R1_00001
Panjit International Inc.
SILICON ZENER DIODE
1SMB2EZ7.5_R1_00001
1SMB2EZ7.5_R1_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION SILICO
PJQ5463A_R2_00001
PJQ5463A_R2_00001
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M