P6KE250A_R2_00001

P6KE250A_R2_00001

Images are for reference only
See Product Specifications

P6KE250A_R2_00001
Описание:
GLASS PASSIVATED JUNCTION TRANSI
Упаковка:
Tape & Reel (TR)
Datasheet:
P6KE250A_R2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:P6KE250A_R2_00001
Категория:Circuit Protection
Подкатегория:TVS - Diodes
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Type:96d9445f264df80066fd6309ac4f27c0
Unidirectional Channels:c4ca4238a0b923820dcc509a6f75849b
Bidirectional Channels:336d5ebc5436534e61d16e63ddfca327
Voltage - Reverse Standoff (Typ):ff92fed2f2bed613146dd5246ab9cc8b
Voltage - Breakdown (Min):1e04d196a9b3097aac0344af70483a3e
Voltage - Clamping (Max) @ Ipp:853209f442953d9c798b051870192810
Current - Peak Pulse (10/1000µs):f3bb89c46ff441283196001e96fcc713
Power - Peak Pulse:1e6f39755f3158d15539c5c23483a111
Power Line Protection:bafd7322c6e97d25b6299b5d6fe8920b
Applications:94a1a3953054d8ece597f4f69bb343d4
Capacitance @ Frequency:336d5ebc5436534e61d16e63ddfca327
Operating Temperature:7ae9262aab4e24bd8ce4ba3a18a5a23f
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:46e8f8d45cd274df397b3780ecf20b1a
Supplier Device Package:df65390c442b655605ed47fd06eb7c07
In Stock: 4000
Stock:
4000 Can Ship Immediately
  • Делиться:
Для использования с
NNCD5.6D-T1-AT
NNCD5.6D-T1-AT
Renesas
NNCD5.6D-T1-AT - ELECTROSTATIC D
VCAN26A2-03S-E3-08
VCAN26A2-03S-E3-08
Vishay General Semiconductor - Diodes Division
TVS DIODE 26.5VWM 50VC SOT23
P4SMA22A/TR13
P4SMA22A/TR13
YAGEO
P4SMA, DO214AC, 18.8V, 30.6V, RE
CPDQ03C5V0USP-HF
CPDQ03C5V0USP-HF
Comchip Technology
TVS DIODE 5VWM 16VC 0402C-03
A5KP9.0CA-G
A5KP9.0CA-G
Comchip Technology
TVS DIODE 9VWM 15.4VC R6
MV1N8180US
MV1N8180US
Microchip Technology
TVS DIODE
P6SMBJ51
P6SMBJ51
Diotec Semiconductor
TRANSIENT VOLTAGE SUPPRESSOR DIO
SMDJ100
SMDJ100
Meritek
TVS DIODE 100VWM 179VC
15KP51C
15KP51C
Littelfuse Inc.
TVS DIODE 51VWM 86.94VC P600
P4KE68-E3/54
P4KE68-E3/54
Vishay General Semiconductor - Diodes Division
TVS DIODE 55.1VWM 98VC DO204AL
3KASMC20AHE3_A/H
3KASMC20AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 20VWM 32.4VC DO214AB
1.5KE160CA R0G
1.5KE160CA R0G
Taiwan Semiconductor Corporation
TVS DIODE 136VWM 219VC DO201
Вас также может заинтересовать
PJGBLC24_R1_00001
PJGBLC24_R1_00001
Panjit International Inc.
ULTRA LOW CAPACITANCE TVS ARRAY
P4SMA43AS_R1_00001
P4SMA43AS_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
3KP9.0A_R2_00001
3KP9.0A_R2_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
KBJ410_T0_00601
KBJ410_T0_00601
Panjit International Inc.
KBJ PACKAGE, 4A/1000V STANDARD B
MMBD4148W_R1_00001
MMBD4148W_R1_00001
Panjit International Inc.
SURFACE MOUNT SWITCHING DIODE
MB320_R1_00001
MB320_R1_00001
Panjit International Inc.
SMC, SKY
BZX84C20-AU_R1_000A1
BZX84C20-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
MMBZ5244A_R1_00001
MMBZ5244A_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PZS5114BCH_R1_00001
PZS5114BCH_R1_00001
Panjit International Inc.
SILICON ZENER DIODE
PJS6601_S2_00001
PJS6601_S2_00001
Panjit International Inc.
20V COMPLEMENTARY ENHANCEMENT MO
PJT7600_R1_00001
PJT7600_R1_00001
Panjit International Inc.
20V COMPLEMENTARY ENHANCEMENT MO
PJW1NA50_R2_00001
PJW1NA50_R2_00001
Panjit International Inc.
500V N-CHANNEL MOSFET