PJA3476_R1_00001

PJA3476_R1_00001

Images are for reference only
See Product Specifications

PJA3476_R1_00001
Описание:
100V N-CHANNEL ENHANCEMENT MODE
Упаковка:
Tape & Reel (TR)
Datasheet:
PJA3476_R1_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJA3476_R1_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:d48ef8c0e68ee05316e2636b296ffa98
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:2124a0a9f43976618ad91f474b8996ed
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:246543677454bc0320b47b186955a38a
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:8ba83db2438078a71d134bcd71baf24f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ae2350350ba6e5a69d2dc91b08eae7b5
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdbfc7f87dda2b41686a11d9db7bf62e
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 475
Stock:
475 Can Ship Immediately
  • Делиться:
Для использования с
G6N02L
G6N02L
Goford Semiconductor
MOSFET N-CH 20V 6A SOT-23-3L
FDS6630A
FDS6630A
Fairchild Semiconductor
MOSFET N-CH 30V 6.5A 8SOIC
SI2323DS-T1-E3
SI2323DS-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 3.7A SOT23-3
SIHP24N80AE-GE3
SIHP24N80AE-GE3
Vishay Siliconix
MOSFET N-CH 800V 21A TO220AB
TSM032NH04CR RLG
TSM032NH04CR RLG
Taiwan Semiconductor Corporation
40V, 81A, SINGLE N-CHANNEL POWER
DMN63D1LT-13
DMN63D1LT-13
Diodes Incorporated
MOSFET N-CH 60V 320MA SOT523
IPB120N10S403ATMA1
IPB120N10S403ATMA1
Infineon Technologies
MOSFET N-CH 100V 120A D2PAK
APTM20DAM04G
APTM20DAM04G
Microchip Technology
MOSFET N-CH 200V 372A SP6
IRF520NSPBF
IRF520NSPBF
Infineon Technologies
MOSFET N-CH 100V 9.7A D2PAK
IRFS17N20DPBF
IRFS17N20DPBF
Infineon Technologies
MOSFET N-CH 200V 16A D2PAK
NTB30N06T4G
NTB30N06T4G
onsemi
MOSFET N-CH 60V 27A D2PAK
STU6N65K3
STU6N65K3
STMicroelectronics
MOSFET N-CH 650V 5.4A IPAK
Вас также может заинтересовать
P6SMBJ58A_R1_00001
P6SMBJ58A_R1_00001
Panjit International Inc.
SMB, TVS
P6KE220AS_AY_00001
P6KE220AS_AY_00001
Panjit International Inc.
TRANSIENT VOLTAGE SUPPRESSOR
5KP17A_R2_00001
5KP17A_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
1.5KE36A_R2_00001
1.5KE36A_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
MBR8200DC_R2_00001
MBR8200DC_R2_00001
Panjit International Inc.
D PAK SURFACE MOUNT SCHOTTKY BAR
MBR3045CT_T0_00001
MBR3045CT_T0_00001
Panjit International Inc.
TO-220AB, SKY
MBR2050CT_T0_00001
MBR2050CT_T0_00001
Panjit International Inc.
20 AMPERS SCHOTTKY BARRIER RECTI
BAS40W_R1_00001
BAS40W_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY DIODE
SD350YS_L2_00001
SD350YS_L2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
SVC12120V_R1_00001
SVC12120V_R1_00001
Panjit International Inc.
ULTRA LOW VF SCHOTTKY RECTIFIER
3EZ13_R2_00001
3EZ13_R2_00001
Panjit International Inc.
SILICON ZENER DIODE
PJD25N03_L2_00001
PJD25N03_L2_00001
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M