PJC138L_R1_00001

PJC138L_R1_00001

Images are for reference only
See Product Specifications

PJC138L_R1_00001
Описание:
60V N-CHANNEL ENHANCEMENT MODE M
Упаковка:
Tape & Reel (TR)
Datasheet:
PJC138L_R1_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJC138L_R1_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:6753131b43c81d45a78a55a58477564b
Drive Voltage (Max Rds On, Min Rds On):d2e44972f573dbb9bc783edf82f45e5b
Rds On (Max) @ Id, Vgs:50ab740d272b0b585372853675a5d6f5
Vgs(th) (Max) @ Id:f710eedc1bf5fdb1a1e1a08d92eb0502
Gate Charge (Qg) (Max) @ Vgs:e2c6fab33775a87e0f8eafa4f53201cb
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:151ce24c30e74a6b254b9edd98e16163
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):38dcf3d9549ca2c6f6128cf7cb5da97e
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:c4937a7af6425ed4f99ff5e1d5cd4746
Package / Case:2cffa920bac58c995bd937e7a19a7bc4
In Stock: 2960
Stock:
2960 Can Ship Immediately
  • Делиться:
Для использования с
SQM100P10-19L_GE3
SQM100P10-19L_GE3
Vishay Siliconix
MOSFET P-CH 100V 93A TO263
FDS3590
FDS3590
onsemi
MOSFET N-CH 80V 6.5A 8SOIC
NVMFS4C03NWFT1G
NVMFS4C03NWFT1G
onsemi
MOSFET N-CH 30V 31.4A/143A 5DFN
LSIC1MO120G0160
LSIC1MO120G0160
Littelfuse Inc.
MOSFET SIC 1200V 14A TO247-4L
APT50M75JLLU2
APT50M75JLLU2
Microchip Technology
MOSFET N-CH 500V 51A SOT227
IRF7821TR
IRF7821TR
Infineon Technologies
MOSFET N-CH 30V 13.6A 8SO
FQPF6N90
FQPF6N90
onsemi
MOSFET N-CH 900V 3.4A TO220F
IPS09N03LA G
IPS09N03LA G
Infineon Technologies
MOSFET N-CH 25V 50A TO251-3
SPP80N06S2L-05
SPP80N06S2L-05
Infineon Technologies
MOSFET N-CH 55V 80A TO220-3
APT20N60BC3G
APT20N60BC3G
Microsemi Corporation
MOSFET N-CH 600V 20.7A TO247-3
STP5N52K3
STP5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A TO220
RJK005N03T146
RJK005N03T146
Rohm Semiconductor
MOSFET N-CH 30V 500MA SMT3
Вас также может заинтересовать
P6SMBJ90CA_R1_00001
P6SMBJ90CA_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
PJSD15W-AU_R1_000A1
PJSD15W-AU_R1_000A1
Panjit International Inc.
SINGLE LINE TVS DIODE FOR ESD PR
P6KE130AS_AY_00001
P6KE130AS_AY_00001
Panjit International Inc.
TRANSIENT VOLTAGE SUPPRESSOR
P6KE6.8CA_R2_00001
P6KE6.8CA_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
GBJ2010_T0_00601
GBJ2010_T0_00601
Panjit International Inc.
GBJ PACKAGE, 20A/1000V STANDARD
SBM1660VFCT_T0_00001
SBM1660VFCT_T0_00001
Panjit International Inc.
ULTRA LOW VF SCHOTTKY RECTIFIER
1N5933B_R2_00001
1N5933B_R2_00001
Panjit International Inc.
SILICON ZENER DIODE
PZ1AH17B_R1_00001
PZ1AH17B_R1_00001
Panjit International Inc.
SILICON ZENER DIODE
BC817DPN_R1_00001
BC817DPN_R1_00001
Panjit International Inc.
SOT23-6L, TRANSISTOR
PJQ4413P_R2_00001
PJQ4413P_R2_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
PJD18N20_L2_00001
PJD18N20_L2_00001
Panjit International Inc.
200V N-CHANNEL ENHANCEMENT MODE
PJQ5462A-AU_R2_000A1
PJQ5462A-AU_R2_000A1
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M