PJC7476_R1_00001

PJC7476_R1_00001

Images are for reference only
See Product Specifications

PJC7476_R1_00001
Описание:
100V N-CHANNEL ENHANCEMENT MODE
Упаковка:
Tape & Reel (TR)
Datasheet:
PJC7476_R1_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJC7476_R1_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:d48ef8c0e68ee05316e2636b296ffa98
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:2124a0a9f43976618ad91f474b8996ed
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:246543677454bc0320b47b186955a38a
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:8ba83db2438078a71d134bcd71baf24f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):38dcf3d9549ca2c6f6128cf7cb5da97e
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:c4937a7af6425ed4f99ff5e1d5cd4746
Package / Case:2cffa920bac58c995bd937e7a19a7bc4
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
HUF75639G3
HUF75639G3
onsemi
MOSFET N-CH 100V 56A TO247-3
DMTH8012LK3-13
DMTH8012LK3-13
Diodes Incorporated
MOSFET N-CH 80V 50A TO252
NVMFS4C03NT3G
NVMFS4C03NT3G
onsemi
MOSFET N-CH 30V 31.4A/143A 5DFN
IRFU9120N
IRFU9120N
Infineon Technologies
MOSFET P-CH 100V 6.6A IPAK
IRFU4105ZTRL
IRFU4105ZTRL
Vishay Siliconix
MOSFET N-CH 55V 30A TO251AA
SI4410DYPBF
SI4410DYPBF
Infineon Technologies
MOSFET N-CH 30V 10A 8SO
HUFA76443P3
HUFA76443P3
onsemi
MOSFET N-CH 60V 75A TO220-3
IRF6611TRPBF
IRF6611TRPBF
Infineon Technologies
MOSFET N-CH 30V 32A DIRECTFET
IRFB7446GPBF
IRFB7446GPBF
Infineon Technologies
MOSFET N CH 40V 120A TO220AB
N0436N#YW
N0436N#YW
Renesas Electronics America Inc
MOSFET N-CHANNEL
BUK9Y7R8-80E,115
BUK9Y7R8-80E,115
NXP USA Inc.
MOSFET N-CH 80V LFPAK56 PWR-SO8
R5205PND3FRATL
R5205PND3FRATL
Rohm Semiconductor
525V 5A TO-252, AUTOMOTIVE POWER
Вас также может заинтересовать
PJSD05CW_R1_00001
PJSD05CW_R1_00001
Panjit International Inc.
SINGLE LINE TVS DIODE FOR ESD PR
P4SMA75CA_R1_00001
P4SMA75CA_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
BAS40AW-AU_R1_000A1
BAS40AW-AU_R1_000A1
Panjit International Inc.
SOT-323, SKY
SBT20150LCT_T0_00001
SBT20150LCT_T0_00001
Panjit International Inc.
TO-220AB, SKY
MBR1650CT_T0_00001
MBR1650CT_T0_00001
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIERS
ER804_T0_00001
ER804_T0_00001
Panjit International Inc.
TO-220AC, SUPER
PG204R_R2_00001
PG204R_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION FAST S
SB320_R2_00001
SB320_R2_00001
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIERS
SD840S_S2_00001
SD840S_S2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
GS1006HE-AU_R1_000A1
GS1006HE-AU_R1_000A1
Panjit International Inc.
SOD-123HE, GENERAL
MMBZ5235AW_R1_00001
MMBZ5235AW_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PZS5113BAS-AU_R1_000A1
PZS5113BAS-AU_R1_000A1
Panjit International Inc.
SILICON ZENER DIODE