PJD10N10_L2_00001

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Mfr. #:

PJD10N10_L2_00001

Mfr.:

Panjit International Inc.

Описание:

100V N-CHANNEL MOSFET

Упаковка:

Tape & Reel (TR)

Datasheet:

PJD10N10_L2_00001 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PJD10N10_L2_00001
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Panjit International Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	7ea24fb68aeddda68bef1d316033ac3b
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	f11d48bb153f4a2187979fba32dc5984
Vgs(th) (Max) @ Id:	54e5d6e67176a5b9df661d089760961f
Gate Charge (Qg) (Max) @ Vgs:	db83709cc1aa640e30cdddd177064057
Vgs (Max):	fbd977bb3518279a4b9189d4188fb888
Input Capacitance (Ciss) (Max) @ Vds:	aaa69241de641598d8793fdd5778c0b5
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	5f6638cab5e43419d3b364053a54f225
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26334f21813abf4634f508e2476262a0
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95