PJD11N06A_L2_00001

PJD11N06A_L2_00001

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PJD11N06A_L2_00001
Описание:
60V N-CHANNEL ENHANCEMENT MODE M
Упаковка:
Tape & Reel (TR)
Datasheet:
PJD11N06A_L2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJD11N06A_L2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:272a2e5b78070ccf938fdce840b5e95e
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:36e81e60ffddfc7f117b830d87e4459b
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:018bb83bdcefd9e979bac57c354c3457
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:c4bd1ac4c484c09e8ddc503cab4dfed3
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):231850eac839da4caf8ff156cbfab6d4
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:26334f21813abf4634f508e2476262a0
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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60V N-CHANNEL ENHANCEMENT MODE M