PJD12P06_L2_00001

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Mfr. #:

PJD12P06_L2_00001

Mfr.:

Panjit International Inc.

Описание:

60V P-CHANNEL ENHANCEMENT MODE M

Упаковка:

Tape & Reel (TR)

Datasheet:

PJD12P06_L2_00001 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PJD12P06_L2_00001
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Panjit International Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	4c403222f8a9806412facd7319ceb963
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	d8a247f35a2c768408e75b1c9ae54666
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	bd1d8a6ab732dfac8018515787131a10
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	95d12695819916604b4c28f525d10ac8
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	52b347c6c5e15b5dc4453af8dad7066d
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26334f21813abf4634f508e2476262a0
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95