PJD16P04-AU_L2_000A1

PJD16P04-AU_L2_000A1

Images are for reference only
See Product Specifications

PJD16P04-AU_L2_000A1
Описание:
40V P-CHANNEL ENHANCEMENT MODE M
Упаковка:
Tape & Reel (TR)
Datasheet:
PJD16P04-AU_L2_000A1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJD16P04-AU_L2_000A1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:0be855ff56c679dad6cf6e3d63bfc440
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:21bab35aed8a7ddb0946b0b0c342b5de
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:78757afdd885ffdbdc2d6ea75a3677ab
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:69e8b0d9ceafa7e5d87a183f733f0b73
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):2660c57b32e44bb3b4159e61f2f6062e
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:26334f21813abf4634f508e2476262a0
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
IPD530N15N3GATMA1
IPD530N15N3GATMA1
Infineon Technologies
MOSFET N-CH 150V 21A TO252-3
DMN313DLT-7
DMN313DLT-7
Diodes Incorporated
MOSFET N-CH 30V 270MA SOT523
NVMFS5C426NLT1G
NVMFS5C426NLT1G
onsemi
MOSFET N-CH 40V 41A/237A 5DFN
MTD4N20E1
MTD4N20E1
onsemi
N-CHANNEL POWER MOSFET
PMCM6501VNE023
PMCM6501VNE023
NXP USA Inc.
PMCM6501 N-CHANNEL, MOSFET
TK5R3E08QM,S1X
TK5R3E08QM,S1X
Toshiba Semiconductor and Storage
UMOS10 TO-220AB 80V 5.3MOHM
DMN2011UFDF-13
DMN2011UFDF-13
Diodes Incorporated
MOSFET N-CH 20V 14.2A 6UDFN
BSC052N03S G
BSC052N03S G
Infineon Technologies
MOSFET N-CH 30V 18A/80A TDSON
BSP615S2L
BSP615S2L
Infineon Technologies
MOSFET N-CH 55V 2.8A SOT223-4
APT4M120K
APT4M120K
Microchip Technology
MOSFET N-CH 1200V 5A TO220
IPI80P04P405AKSA1
IPI80P04P405AKSA1
Infineon Technologies
MOSFET P-CH 40V 80A TO262-3
RQ3E180AJTB1
RQ3E180AJTB1
Rohm Semiconductor
NCH 30V 18A MIDDLE POWER MOSFET:
Вас также может заинтересовать
P4SMAJ150A_R1_00001
P4SMAJ150A_R1_00001
Panjit International Inc.
SMA, TVS
P4SMA180CAS_R1_00001
P4SMA180CAS_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P6SMB36CA_R1_00001
P6SMB36CA_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P6SMB20A-AU_R1_000A1
P6SMB20A-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
UF1004CT_T0_00001
UF1004CT_T0_00001
Panjit International Inc.
TO-220AB, ULTRA
BAT721AC_R1_00001
BAT721AC_R1_00001
Panjit International Inc.
SCHOTTKY BARRIER (DOUBLE) DIODES
SB36AFC_R1_00001
SB36AFC_R1_00001
Panjit International Inc.
SMAF-C, SKY
UF2B_R1_00001
UF2B_R1_00001
Panjit International Inc.
SURFACE MOUNT ULTRA FAST RECTIFI
BAT54W-AU_R1_000A1
BAT54W-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SCHOTTKY DIODE
BD860S_L2_00001
BD860S_L2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
BZX84C39TW_R1_00001
BZX84C39TW_R1_00001
Panjit International Inc.
TRIPLE ISOLATED SURFACE MOUNT ZE
PZ1AL56B_R1_00001
PZ1AL56B_R1_00001
Panjit International Inc.
SILICON ZENER DIODE