PJD18N20_L2_00001

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Mfr. #:

PJD18N20_L2_00001

Mfr.:

Panjit International Inc.

Описание:

200V N-CHANNEL ENHANCEMENT MODE

Упаковка:

Tape & Reel (TR)

Datasheet:

PJD18N20_L2_00001 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PJD18N20_L2_00001
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Panjit International Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:	066e0bb89d610303369c0ca2b47f7252
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	c31449831535ddf4a376e8cbcb7b9112
Vgs(th) (Max) @ Id:	66756bbbd2b15b665d5248f5ca1758a1
Gate Charge (Qg) (Max) @ Vgs:	adefe80c4a89824fe268dd1bd0082a35
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	ad6a8c92f9f2137cb2fc19b63dea376b
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	35e259c9e67ff8fd40b9e992f041f118
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26334f21813abf4634f508e2476262a0
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95