PJD1NA60A_L2_00001

PJD1NA60A_L2_00001

Images are for reference only
See Product Specifications

PJD1NA60A_L2_00001
Описание:
600V N-CHANNEL MOSFET
Упаковка:
Tape & Reel (TR)
Datasheet:
PJD1NA60A_L2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJD1NA60A_L2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:45a48804a6be1a50f1da045aa07cbd8c
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:f7447e6e086fee853e153ea4e6983662
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:8c4bb05f4e2e1fa0c7ed284641ad6885
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:3f5e7047dbd157ccff35d716d921aff0
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):c15f7989c27f89b3f56577ed0a724b5c
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:26334f21813abf4634f508e2476262a0
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BUZ111S
BUZ111S
Infineon Technologies
N-CHANNEL POWER MOSFET
SQ2318BES-T1_GE3
SQ2318BES-T1_GE3
Vishay Siliconix
MOSFET N-CH 40V 8A SOT23-3
TK1R5R04PB,LXGQ
TK1R5R04PB,LXGQ
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 160A D2PAK
SPP08N80C3XKSA1
SPP08N80C3XKSA1
Infineon Technologies
MOSFET N-CH 800V 8A TO220-3
IPD60R650CEAUMA1
IPD60R650CEAUMA1
Infineon Technologies
CONSUMER
DMN2310UT-7
DMN2310UT-7
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT523 T&R
DMN6070SY-13
DMN6070SY-13
Diodes Incorporated
MOSFET N-CH 60V 4.1A SOT89-3
DMN3025LFG-13
DMN3025LFG-13
Diodes Incorporated
MOSFET N-CH 30V 7.5A PWRDI3333-8
STF12PF06
STF12PF06
STMicroelectronics
MOSFET P-CH 60V 8A TO220FP
IRF6894MTR1PBF
IRF6894MTR1PBF
Infineon Technologies
MOSFET N-CH 25V 32A DIRECTFET
NVMFS5832NLWFT3G
NVMFS5832NLWFT3G
onsemi
MOSFET N-CH 40V 21A 5DFN
R6030ENZC17
R6030ENZC17
Rohm Semiconductor
MOSFET N-CH 600V 30A TO3PF
Вас также может заинтересовать
P4SMAJ30AS_R1_00001
P4SMAJ30AS_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5SMCJ190AS_R1_00001
1.5SMCJ190AS_R1_00001
Panjit International Inc.
TRANSIENT VOLTAGE SUPPRESSOR
P4SMAJ110CAS_R1_00001
P4SMAJ110CAS_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4KE440C_R2_00001
P4KE440C_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
P6SMB12A-AU_R1_000A1
P6SMB12A-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5SMCJ220A_R1_00001
1.5SMCJ220A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
BAT30S_R1_00001
BAT30S_R1_00001
Panjit International Inc.
SMALL SIGNAL SCHOTTKY DIODES
UF108G_R2_00001
UF108G_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION ULTRAF
SS3040FL-F_R1_00001
SS3040FL-F_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
MMBZ5245BTW_R1_00001
MMBZ5245BTW_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZT52-B47_R1_00001
BZT52-B47_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BC846BS_R1_00001
BC846BS_R1_00001
Panjit International Inc.
NPN GENERAL PURPOSE TRANSISTORS