PJD25N10A_L2_00001

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Mfr. #:

PJD25N10A_L2_00001

Mfr.:

Panjit International Inc.

Описание:

100V N-CHANNEL ENHANCEMENT MODE

Упаковка:

Tape & Reel (TR)

Datasheet:

PJD25N10A_L2_00001 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PJD25N10A_L2_00001
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Panjit International Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	14ce6f358157785eeb953b483baae267
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	f432631cd4aef47c530845100511e0b5
Vgs(th) (Max) @ Id:	bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:	8efc990a780d589424d353135dbf1bb9
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	c2cf85bfd0cdc62147f08f28dd1d668e
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	9caac5cd7663a43ac8e16fc7818823e7
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26334f21813abf4634f508e2476262a0
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95