PJD30N15_L2_00001

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Mfr. #:

PJD30N15_L2_00001

Mfr.:

Panjit International Inc.

Описание:

150V N-CHANNEL ENHANCEMENT MODE

Упаковка:

Tape & Reel (TR)

Datasheet:

PJD30N15_L2_00001 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PJD30N15_L2_00001
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Panjit International Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	f5857b5c2d0b94d156ab7cc94df182c6
Current - Continuous Drain (Id) @ 25°C:	8dffd937cfe6de5b3d278b145de71fa5
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	1671f00847dc322f632907e2db18c4b4
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	fabbd99075a2498c1c4f48fd344d6ff7
Vgs (Max):	fbd977bb3518279a4b9189d4188fb888
Input Capacitance (Ciss) (Max) @ Vds:	a6ed434528c2a536dc77149e1471db96
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	87f9c9fbdcc958ec349eba97527dcbc6
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26334f21813abf4634f508e2476262a0
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95