PJD3NA80_L2_00001

Images are for reference only
See Product Specifications

Mfr. #:

PJD3NA80_L2_00001

Mfr.:

Panjit International Inc.

Описание:

800V N-CHANNEL MOSFET

Упаковка:

Tape & Reel (TR)

Datasheet:

PJD3NA80_L2_00001 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PJD3NA80_L2_00001
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Panjit International Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	a98c7ec8106cf16aced8afc464bc6bdf
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:	52e93565a89abe7c2cd3408249a5dc5b
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	20babf05fcc2b39c712c26724e2d1a43
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	e8a30954980feb5704747c3b8f94ff10
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	0f3c712fb3ab5d00cf0260a77865195d
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	c94068f0787c634f82ce5ff7f457b516
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26334f21813abf4634f508e2476262a0
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95