PJD40N06A-AU_L2_000A1

PJD40N06A-AU_L2_000A1

Images are for reference only
See Product Specifications

PJD40N06A-AU_L2_000A1
Описание:
60V N-CHANNEL ENHANCEMENT MODE M
Упаковка:
Tape & Reel (TR)
Datasheet:
PJD40N06A-AU_L2_000A1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJD40N06A-AU_L2_000A1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:3bea801ada2019f6e4c9b4fd24faaa4c
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:2604b3887057d0aab678de6ac0b599c2
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:8c0562c9545d380d7638fed9443ae9df
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:7c04afc359d993fa0c6def2a7e693758
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):646fdcffaf4624904148286cf1e37825
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:26334f21813abf4634f508e2476262a0
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
G3R450MT17D
G3R450MT17D
GeneSiC Semiconductor
SIC MOSFET N-CH 9A TO247-3
DMP2035UFDF-7
DMP2035UFDF-7
Diodes Incorporated
MOSFET P-CH 20V 8.1A 6UDFN
APT34M60S
APT34M60S
Microchip Technology
MOSFET N-CH 600V 36A D3PAK
BSS138NH6433XTMA1
BSS138NH6433XTMA1
Infineon Technologies
MOSFET N-CH 60V 230MA SOT23-3
IPT60R145CFD7XTMA1
IPT60R145CFD7XTMA1
Infineon Technologies
MOSFET N-CH 600V 19A 8HSOF
DMN2710UWQ-7
DMN2710UWQ-7
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT323 T&R
FCP190N60-GF102
FCP190N60-GF102
onsemi
MOSFET N-CH 600V 20.2A TO220-3
IRFS4229PBF
IRFS4229PBF
Infineon Technologies
MOSFET N-CH 250V 45A D2PAK
FQD6N50CTM_F080
FQD6N50CTM_F080
onsemi
MOSFET N-CH 500V 4.5A DPAK
AON6370P
AON6370P
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 23A DFN
NDS355AN_G
NDS355AN_G
onsemi
MOSFET N-CH 30V 1.7A SUPERSOT3
RRH040P03TB1
RRH040P03TB1
Rohm Semiconductor
MOSFET P-CH 30V 4A 8SOP
Вас также может заинтересовать
P4SMA33AS_R1_00001
P4SMA33AS_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P6SMBJ90A_R1_00001
P6SMBJ90A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4KE11C_R2_00001
P4KE11C_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
P4HE18A_R1_00001
P4HE18A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
3KP18CA_R2_00001
3KP18CA_R2_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5KE15A_R2_00001
1.5KE15A_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
ER1601AFCT_T0_00001
ER1601AFCT_T0_00001
Panjit International Inc.
ISOLATION SUPERFAST RECOVERY REC
BD8200S_L2_00001
BD8200S_L2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
BZX584C13_R1_00001
BZX584C13_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX584C18_R1_00001
BZX584C18_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PJT7839_R1_00001
PJT7839_R1_00001
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
PJS6400_S1_00001
PJS6400_S1_00001
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M