PJD40N15_L2_00001

PJD40N15_L2_00001

Images are for reference only
See Product Specifications

PJD40N15_L2_00001
Описание:
150V N-CHANNEL ENHANCEMENT MODE
Упаковка:
Tape & Reel (TR)
Datasheet:
PJD40N15_L2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJD40N15_L2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):f5857b5c2d0b94d156ab7cc94df182c6
Current - Continuous Drain (Id) @ 25°C:ca162dab1910809c64382708b8c5fb00
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:4eeb398d75a338b1f50508dd826f03f6
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:4e71bc96f30d54e9842d44bf185090bd
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:8feb9f50c41210506fbcca582f7dce11
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):981514ee9f1aae139f541dbe016bef00
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:26334f21813abf4634f508e2476262a0
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
RJK4007DPP-G2#T2
RJK4007DPP-G2#T2
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
FDMS86150ET100
FDMS86150ET100
onsemi
MOSFET N-CH 100V 16A POWER56
TK1R5R04PB,LXGQ
TK1R5R04PB,LXGQ
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 160A D2PAK
IXFP90N20X3
IXFP90N20X3
IXYS
MOSFET N-CH 200V 90A TO220
IPP028N08N3GXKSA1
IPP028N08N3GXKSA1
Infineon Technologies
MOSFET N-CH 80V 100A TO220-3
PMPB40SNA115
PMPB40SNA115
NXP USA Inc.
POWER FIELD-EFFECT TRANSISTOR
ISZ0702NLSATMA1
ISZ0702NLSATMA1
Infineon Technologies
MOSFET N-CH 60V 17A/86A TSDSON
DMN1019UVT-13
DMN1019UVT-13
Diodes Incorporated
MOSFET N-CH 12V 10.7A TSOT26
STU2N62K3
STU2N62K3
STMicroelectronics
MOSFET N-CH 620V 2.2A IPAK
IRFU3706PBF
IRFU3706PBF
Infineon Technologies
MOSFET N-CH 20V 75A IPAK
APTC80SK15T1G
APTC80SK15T1G
Microsemi Corporation
MOSFET N-CH 800V 28A SP1
DMP3165SVT-7
DMP3165SVT-7
Diodes Incorporated
MOSFET BVDSS: 25V-30V TSOT26
Вас также может заинтересовать
P4FL7.5A_R1_00001
P4FL7.5A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P6KE39A_R2_00001
P6KE39A_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
3KP17CA_R2_00001
3KP17CA_R2_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5KE150CAS_AY_00001
1.5KE150CAS_AY_00001
Panjit International Inc.
TVS 1500W 150V BIDIR DO-201AE
GBU1010_T0_00601
GBU1010_T0_00601
Panjit International Inc.
GBU PACKAGE, 10A/1000V STANDARD
S2A_R1_00001
S2A_R1_00001
Panjit International Inc.
SURFACE MOUNT RECTIFIER
PG5392_R2_00001
PG5392_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION PLASTI
BZT52-B33-AU_R1_000A1
BZT52-B33-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84B47W_R1_00001
BZX84B47W_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
1SMB3EZ28_R1_00001
1SMB3EZ28_R1_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION SILICO
BC857CW_R1_00001
BC857CW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
PJQ4411P_R2_00001
PJQ4411P_R2_00001
Panjit International Inc.
20V P-CHANNEL ENHANCEMENT MODE M