PJD4NA65_R2_00001

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See Product Specifications

Mfr. #:

PJD4NA65_R2_00001

Mfr.:

Panjit International Inc.

Описание:

650V N-CHANNEL MOSFET

Упаковка:

Tape & Reel (TR)

Datasheet:

PJD4NA65_R2_00001 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PJD4NA65_R2_00001
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Panjit International Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:	0fef84355726c5ae6e53a5fd06d60e2d
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	cd74005e48ec2e80a9dfecb0c2350ce1
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	7f97c13198ebef48b9604444518c1372
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	17c1a9c798f8cb218d676165b9756d6b
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	7ada2e7f7b50fcad7566a70926a057cb
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95