PJD4NA90_L2_00001

PJD4NA90_L2_00001

Images are for reference only
See Product Specifications

PJD4NA90_L2_00001
Описание:
900V N-CHANNEL MOSFET
Упаковка:
Tape & Reel (TR)
Datasheet:
PJD4NA90_L2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJD4NA90_L2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):d409dc1d35f25724926a975f7246a819
Current - Continuous Drain (Id) @ 25°C:0fef84355726c5ae6e53a5fd06d60e2d
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:94071b0a96f07590b23ee8ea12e8573f
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:988fe98cb9f26fb087a3d0d542dc4408
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:86860b0482b0a5d2f1f5d771ea8f4b14
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):b5ec22b044b4f3beee50a26e79074bf6
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:26334f21813abf4634f508e2476262a0
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
STQ2NK60ZR-AP
STQ2NK60ZR-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
FDD6670A
FDD6670A
onsemi
MOSFET N-CH 30V 15A/66A DPAK
SQJ414EP-T1_GE3
SQJ414EP-T1_GE3
Vishay Siliconix
MOSFET N-CH 30V 30A PPAK SO-8
NTMFS4C03NT3G
NTMFS4C03NT3G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
APT20M20B2FLLG
APT20M20B2FLLG
Microchip Technology
MOSFET N-CH 200V 100A T-MAX
IRF6619TRPBF
IRF6619TRPBF
Infineon Technologies
MOSFET N-CH 20V 30A DIRECTFET
BSP300 E6327
BSP300 E6327
Infineon Technologies
MOSFET N-CH 800V 190MA SOT223-4
SI2311DS-T1-E3
SI2311DS-T1-E3
Vishay Siliconix
MOSFET P-CH 8V 3A SOT23-3
SI4646DY-T1-GE3
SI4646DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 12A 8SO
IRLR7843CTRPBF
IRLR7843CTRPBF
Infineon Technologies
MOSFET N-CH 30V 161A DPAK
IPI120P04P4L03AKSA1
IPI120P04P4L03AKSA1
Infineon Technologies
MOSFET P-CH 40V 120A TO262-3
IPP05CN10NGHKSA1
IPP05CN10NGHKSA1
Infineon Technologies
MOSFET N-CH 100V 100A TO-220
Вас также может заинтересовать
P2AL5.0A_R1_00001
P2AL5.0A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4KE350A_R2_00001
P4KE350A_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
1.5SMCJ26A-AU_R1_000A1
1.5SMCJ26A-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
SM8S17A-AU_R2_000A1
SM8S17A-AU_R2_000A1
Panjit International Inc.
6.6KW SURFACE MOUNT TRANSIENT VO
S5M_R1_00001
S5M_R1_00001
Panjit International Inc.
SMC, GENERAL
PG202_R2_00001
PG202_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION PLASTI
MMBZ5225BTW_R1_00001
MMBZ5225BTW_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZT52-B27S_R1_00001
BZT52-B27S_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84B4V3W_R1_00001
BZX84B4V3W_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
1N5368B_R2_00001
1N5368B_R2_00001
Panjit International Inc.
SILICON ZENER DIODE
1SMB2EZ33_R1_00001
1SMB2EZ33_R1_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION SILICO
PJS6412_S1_00001
PJS6412_S1_00001
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M