PJD55N03_L2_00001

PJD55N03_L2_00001

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PJD55N03_L2_00001
Описание:
30V N-CHANNEL ENHANCEMENT MODE M
Упаковка:
Tape & Reel (TR)
Datasheet:
PJD55N03_L2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJD55N03_L2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:972f4e65ded0f3acbfb8e85ba7ac8115
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:8554ab2a3272909fc201c4cf6d3cfa17
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:093c9f9d74a40f44e2941271fc0796e3
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:36aa627e1beb51d3cdef222794b5aefb
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):b61a5c5746b603cbbc3d5a7771b1a474
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:26334f21813abf4634f508e2476262a0
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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30V N-CHANNEL ENHANCEMENT MODE M