PJD80N04_L2_00001

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Mfr. #:

PJD80N04_L2_00001

Mfr.:

Panjit International Inc.

Описание:

40V N-CHANNEL ENHANCEMENT MODE M

Упаковка:

Tape & Reel (TR)

Datasheet:

PJD80N04_L2_00001 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PJD80N04_L2_00001
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Panjit International Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	d4f3531f785a0accc2a138a05e186749
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	7adaf52ade30932410774ea54f9b8901
Vgs(th) (Max) @ Id:	bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:	bfb0e5e5d953b10673e11a0dbf39483e
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	de8b5682a93833c42441578685e28e59
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	4f9b045916190230f80eed03c7f2f544
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26334f21813abf4634f508e2476262a0
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95