PJE138L_R1_00001

PJE138L_R1_00001

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PJE138L_R1_00001
Описание:
60V N-CHANNEL ENHANCEMENT MODE M
Упаковка:
Tape & Reel (TR)
Datasheet:
PJE138L_R1_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJE138L_R1_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:40bdabb4c2515143cd5d2f6a4efd26db
Drive Voltage (Max Rds On, Min Rds On):d2e44972f573dbb9bc783edf82f45e5b
Rds On (Max) @ Id, Vgs:46f64f8a588df8d6214c383eec8fe44e
Vgs(th) (Max) @ Id:f710eedc1bf5fdb1a1e1a08d92eb0502
Gate Charge (Qg) (Max) @ Vgs:e2c6fab33775a87e0f8eafa4f53201cb
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:151ce24c30e74a6b254b9edd98e16163
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):69351d4a5cf3b9c164146744910700ae
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:a3aeb12e681ccde3b9a11bc7ce332447
Package / Case:a3aeb12e681ccde3b9a11bc7ce332447
In Stock: 9460
Stock:
9460 Can Ship Immediately
  • Делиться:
Для использования с
G60N10T
G60N10T
Goford Semiconductor
N100V,RD(MAX)<25M@10V,RD(MAX)<30
BSC005N03LS5ATMA1
BSC005N03LS5ATMA1
Infineon Technologies
TRENCH <= 40V
CSD19532Q5BT
CSD19532Q5BT
Texas Instruments
MOSFET N-CH 100V 100A 8VSON
BUK7Y98-80EX
BUK7Y98-80EX
Nexperia USA Inc.
MOSFET N-CH 80V 12.3A LFPAK56
SQP120N10-09_GE3
SQP120N10-09_GE3
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IPB020N04NGATMA1
IPB020N04NGATMA1
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BSP89 E6327
BSP89 E6327
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SPU02N60S5BKMA1
SPU02N60S5BKMA1
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PH6030AL,115
PH6030AL,115
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AUIRF4104
AUIRF4104
Infineon Technologies
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NVTJD4401NT1G
NVTJD4401NT1G
onsemi
MOSFET N-CH 20V 0.63A SC-88
BUK6Y32-60PX
BUK6Y32-60PX
Nexperia USA Inc.
MOSFET P-CH 60V 40A LFPAK56
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