PJF60R620E_T0_00001

PJF60R620E_T0_00001

Images are for reference only
See Product Specifications

PJF60R620E_T0_00001
Описание:
600V N-CHANNEL SUPER JUNCTION MO
Упаковка:
Tube
Datasheet:
PJF60R620E_T0_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJF60R620E_T0_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:4e96a437ef885323ba53916ce8d94b32
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:badd98ace681302363187d3c39220cb7
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:82b113cefa8bdd5383fff44f641f8fc1
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:63c7c2ecda4aee4818b67fd6d94d7f6f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):dba403401f75ad35d636aa24bdc466f3
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:5efe0b9a12e1cf3c5988e9e6310d2c45
Package / Case:a02e0d1a928de3366340ceae094aecd8
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
SIRA28BDP-T1-GE3
SIRA28BDP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 18A/38A PPAK SO8
STW4N150
STW4N150
STMicroelectronics
MOSFET N-CH 1500V 4A TO247-3
IRFS4510TRLPBF
IRFS4510TRLPBF
Infineon Technologies
MOSFET N-CH 100V 61A D2PAK
STP23NM50N
STP23NM50N
STMicroelectronics
MOSFET N-CH 500V 17A TO220-3
STP80NF10FP
STP80NF10FP
STMicroelectronics
MOSFET N-CH 100V 38A TO220FP
IPN80R1K4P7
IPN80R1K4P7
Infineon Technologies
N-CHANNEL POWER MOSFET
DMP3028LFDEQ-7
DMP3028LFDEQ-7
Diodes Incorporated
MOSFET BVDSS: 25V~30V U-DFN2020-
AOD4N60
AOD4N60
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 4A TO252
IPL65R165CFDAUMA1
IPL65R165CFDAUMA1
Infineon Technologies
MOSFET N-CH 650V 21.3A 4VSON
BSZ042N04NSGATMA1
BSZ042N04NSGATMA1
Infineon Technologies
MOSFET N-CH 40V 40A TSDSON-8
IXTC36P15P
IXTC36P15P
IXYS
MOSFET P-CH 150V 22A ISOPLUS220
RQ3G150GNTB
RQ3G150GNTB
Rohm Semiconductor
MOSFET N-CHANNEL 40V 39A 8HSMT
Вас также может заинтересовать
P4KE62A_R2_00001
P4KE62A_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
1.5SMC100A_R1_00001
1.5SMC100A_R1_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
1.5KE220A_R2_00001
1.5KE220A_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
BAS100ATB6_R1_00001
BAS100ATB6_R1_00001
Panjit International Inc.
SURFACE MOUNT DUAL ISOLATED OPPO
MBR3040CT_T0_00001
MBR3040CT_T0_00001
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIERS
ES1002FL_R1_00001
ES1002FL_R1_00001
Panjit International Inc.
SOD-123FL, SUPER
SRC4200UF_R1_00001
SRC4200UF_R1_00001
Panjit International Inc.
EXTREME LOW VF SCHOTTKY BARRIER
SK26F_R2_00001
SK26F_R2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
MMBZ5230B_R1_00001
MMBZ5230B_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
MMSZ5256B_R1_00001
MMSZ5256B_R1_00001
Panjit International Inc.
SOD-123, ZENER
PZS1117BES_R1_00001
PZS1117BES_R1_00001
Panjit International Inc.
SILICON ZENER DIODE
PJQ4448P_R2_00001
PJQ4448P_R2_00001
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M