PJL9418_R2_00001

PJL9418_R2_00001

Images are for reference only
See Product Specifications

PJL9418_R2_00001
Описание:
30V N-CHANNEL ENHANCEMENT MODE M
Упаковка:
Tape & Reel (TR)
Datasheet:
PJL9418_R2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJL9418_R2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:66ab69b459c614644a63dc0c3e22ff0d
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:ee5d9e7c43ec34572b7269f7d8c9eb79
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:62750d6640d9ab0dea55aa18a04caf46
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:fa134a2f12acbd3385b36b03f8e3e775
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):c3495bb180ab9b6d6d48ebcdaa87f2e9
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fe7cbfc5c8dc998814597054b009cbc7
Package / Case:f80d2dd5409d1e9f8a546eb6d6a8728d
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
FQI2N90TU
FQI2N90TU
Fairchild Semiconductor
MOSFET N-CH 900V 2.2A I2PAK
IPW60R145CFD7XKSA1
IPW60R145CFD7XKSA1
Infineon Technologies
MOSFET HIGH POWER
SIRA99DP-T1-GE3
SIRA99DP-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 47.9A/195A PPAK
APT22F100J
APT22F100J
Microchip Technology
MOSFET N-CH 1000V 23A ISOTOP
IPP045N10N3G
IPP045N10N3G
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 1
IRFR3710ZPBF
IRFR3710ZPBF
Infineon Technologies
MOSFET N-CH 100V 42A DPAK
IXFX21N100Q
IXFX21N100Q
IXYS
MOSFET N-CH 1000V 21A PLUS247-3
IPI120N06S402AKSA1
IPI120N06S402AKSA1
Infineon Technologies
MOSFET N-CH 60V 120A TO262-3
NTD4963NT4G
NTD4963NT4G
onsemi
MOSFET N-CH 30V 8.1A/44A DPAK
IPD250N06N3GBTMA1
IPD250N06N3GBTMA1
Infineon Technologies
MOSFET N-CH 60V 28A TO252-3
RCX511N25
RCX511N25
Rohm Semiconductor
MOSFET N-CH 250V 51A TO220FM
2SK2713
2SK2713
Rohm Semiconductor
MOSFET N-CH 450V 5A TO220FN
Вас также может заинтересовать
1.5SMC62CA_R1_00001
1.5SMC62CA_R1_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
P1CH10A_R1_00001
P1CH10A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4SMA39_R1_00001
P4SMA39_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
3.0SMCJ70CA_R1_00001
3.0SMCJ70CA_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
3KP200A_R2_00001
3KP200A_R2_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
BAV70DW_R1_00001
BAV70DW_R1_00001
Panjit International Inc.
SURFACE MOUNT SWITCHING DIODE
MMBD7000_R1_00001
MMBD7000_R1_00001
Panjit International Inc.
SOT-23, SWITCHING
BD5150YS_S2_00001
BD5150YS_S2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
MER2DBF_R1_00701
MER2DBF_R1_00701
Panjit International Inc.
200V,SUPER FAST RECOVERY RECTIFI
BZX84C39W_R1_00001
BZX84C39W_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PZS5119BCH-AU_R1_000A1
PZS5119BCH-AU_R1_000A1
Panjit International Inc.
SILICON ZENER DIODE
PJU2NA70_T0_00001
PJU2NA70_T0_00001
Panjit International Inc.
MOSFET