PJL9801_R2_00001

PJL9801_R2_00001

Images are for reference only
See Product Specifications

PJL9801_R2_00001
Описание:
30V P-CHANNEL ENHANCEMENT MODE M
Упаковка:
Tape & Reel (TR)
Datasheet:
PJL9801_R2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJL9801_R2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Arrays
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:3287c7f189dff331f44cf4818954d300
FET Feature:eb6d8ae6f20283755b339c0dc273988b
Drain to Source Voltage (Vdss):9ec92e92d0efca44e7ef022a61c49068
Current - Continuous Drain (Id) @ 25°C:d59d0f233fe79879c037a2476500de6f
Rds On (Max) @ Id, Vgs:8a29d75c904d8ae0c3b7f5e53db02130
Vgs(th) (Max) @ Id:669e4b1282c11e0b76a814e2cd1493cb
Gate Charge (Qg) (Max) @ Vgs:52e5bb1b6a198a073ddfc2d28bbd8279
Input Capacitance (Ciss) (Max) @ Vds:99d1636e098fc58caca4a70a2087488f
Power - Max:c2530d5e7da39ea670d9fb13a57ed38d
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:f80d2dd5409d1e9f8a546eb6d6a8728d
Supplier Device Package:fe7cbfc5c8dc998814597054b009cbc7
In Stock: 2500
Stock:
2500 Can Ship Immediately
  • Делиться:
Для использования с
EPC2106
EPC2106
EPC
GANFET TRANS SYM 100V BUMPED DIE
SSM6N58NU,LF
SSM6N58NU,LF
Toshiba Semiconductor and Storage
MOSFET 2N-CH 30V 4A UDFN6
FDW2503N
FDW2503N
Fairchild Semiconductor
SMALL SIGNAL N-CHANNEL MOSFET
DMP6050SSD-13
DMP6050SSD-13
Diodes Incorporated
MOSFET 2P-CH 60V 4.8A 8-SO
SI3552DV-T1-GE3
SI3552DV-T1-GE3
Vishay Siliconix
MOSFET N/P-CH 30V 6-TSOP
CSD87355Q5DT
CSD87355Q5DT
Texas Instruments
MOSFET 2N-CH 30V 45A 8LSON
SQ3585EV-T1_GE3
SQ3585EV-T1_GE3
Vishay Siliconix
MOSFET N/P-CH 20V 6TSOP
MSCSM120HM50CT3AG
MSCSM120HM50CT3AG
Microchip Technology
PM-MOSFET-SIC-SBD~-SP3F
ZXMHN6A07T8TA
ZXMHN6A07T8TA
Diodes Incorporated
MOSFET 4N-CH 60V 1.4A SM8
FDMS3615S-PC01
FDMS3615S-PC01
onsemi
MOSFET N-CHANNEL POWER56
BSS8402DW-7-G
BSS8402DW-7-G
Diodes Incorporated
MOSFET N/P-CH 60V/50V SC70-6
UM6K31NTN
UM6K31NTN
Rohm Semiconductor
MOSFET 2N-CH 60V 0.25A UMT6
Вас также может заинтересовать
PEC2605C1CS_R1_00001
PEC2605C1CS_R1_00001
Panjit International Inc.
VERY LOW CAPACITANCE ESD PROTECT
1.5SMCJ14CA_R1_00001
1.5SMCJ14CA_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5SMC24A-AU_R1_000A1
1.5SMC24A-AU_R1_000A1
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
SM6S40A-AU_R2_000A1
SM6S40A-AU_R2_000A1
Panjit International Inc.
4.6KW SURFACE MOUNT TRANSIENT VO
SMF8.0A-AU_R1_000A1
SMF8.0A-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5KE30CAS_AY_00001
1.5KE30CAS_AY_00001
Panjit International Inc.
TVS 1500W 30V BIDIR DO-201AE
BAT54ADW_R1_00001
BAT54ADW_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY DIODE ARR
BD845CS_L2_00001
BD845CS_L2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
MBR10150F_T0_00001
MBR10150F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
PDZ5.1B_R1_00001
PDZ5.1B_R1_00001
Panjit International Inc.
SOD-323, ZENER
BZX84B17_R1_00001
BZX84B17_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PJA3476_R1_00001
PJA3476_R1_00001
Panjit International Inc.
100V N-CHANNEL ENHANCEMENT MODE